Abstract: An assembly that includes a first substrate, a second substrate, and a pair of bonding layers disposed between and bonded to the first and second substrates. The assembly further includes a solder layer disposed between the pair of bonding layers such that the solder layer is isolated from contacting the first substrate and the second substrate. The solder layer has a low melting temperature relative to a high melting temperature of the bonding layers. A coating is disposed over at least the pair of bonding layers and the solder layer such that the coating encapsulates the solder layer between the pair of bonding layers. The solder layer melts into a liquid form when the assembly operates at a temperature above the low melting temperature of the solder layer and the coating maintains the liquid form of the solder layer between the pair of bonding layers.

Abstract: Systems and methods for providing heating and cooling to a cabin of an autonomous or semiautonomous electric vehicle. A system includes one or more autonomous or semiautonomous electric vehicle components generating thermal energy as a byproduct of operation, a radiator fluidly coupled to the one or more vehicle components and positioned downstream from the one or more vehicle components such that the radiator receives at least a portion of the thermal energy, a thermoelectric cooler thermally coupled to and located downstream from the radiator, and one or more bypass valves that control fluid flow from the radiator such that fluid flows directly to a cabin of the vehicle or flows through the thermoelectric cooler before flowing into the cabin.

Abstract: A system, computer readable medium, and a method for monitoring power module degradation in a vehicle are provided. The method includes determining a structure function of a power module, determining a change in the structure function based on a comparison between the structure function and an initial or baseline structure function associated with the power module, outputting a degradation determination result based on the change in the structure function, and generating an alert when the degradation determination result exceeds a predetermined or adaptively determined degradation criterion value.

Abstract: A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Abstract: A system of bonded substrates may include a first substrate, a second substrate, and a bonding layer. The first substrate may include a bonding surface, wherein a geometry of the bonding surface of the first substrate includes a plurality of microchannels. The second substrate may include a complementary bonding surface. The bonding layer may be positioned between the first substrate and the second substrate, wherein the bonding layer may fill the microchannels of the first substrate and may contact substantially the entire bonding surface of the first substrate. The bonding layer may include a metal.

Abstract: Cooling devices, systems including cooling devices, and methods of forming tubes for cooling devices are disclosed. A method for forming a tube for a cooling device includes positioning an opal structure on an interior surface of the tube, the opal structure having voids around a plurality of spheres, depositing a material over the opal structure and within the voids around the plurality of spheres, and removing the opal structure such that the material forms a patterned structure having a plurality of dimples and a plurality of pores.

Abstract: Switches, breakers that incorporate a phase change material are disclosed, as well as electrical devices including the same. A switch includes a first conductor, a second conductor spaced a distance from the first conductor such that the second conductor does not contact the first conductor, and a switching device electrically coupled to the first conductor, the switching device having a phase change material that, when heated, expands to electrically contact the second conductor.

Abstract: Methods and apparatuses for controlled processing of high temperature bonding systems via devices to control heating and cooling systems of a high temperature heating bonding includes use of a sinter fixture device including a plate surface, that is shaped to contact and conform to a contacting surface of a TLPS substrate assembly, and a plurality of channels below the plate surface within a base body of the sinter fixture device shaped to receive heating and cooling elements. A first set of the one or more channels includes a plurality of cross-channels, a cooling medium inlet, and a cooling medium outlet, which cross-channels, cooling medium inlet, and cooling medium outlet are in fluid communication with one another. A second set of the one or more channels includes a plurality of heating element passageways.

Abstract: Systems and methods of simulating a physical bond layer comprising a composite material and predicting one or more properties of the composite material are disclosed. A method includes obtaining one or more X-ray images of a bulk physical sample of a composite material, the one or more X-ray images including one or more visual identifiers that correspond to one or more materials present in the bulk physical sample, and generating a three dimensional image of the bulk physical sample from the one or more X-ray images. The three dimensional image includes one or more labels indicating the presence and location of the one or more materials. The method further includes creating a meshed three dimensional microstructure-based model from the three dimensional image and simulating a physical bond layer with the meshed three dimensional microstructure-based model. The meshed three dimensional microstructure-based model incorporates data obtained from the one or more labels.

Abstract: An assembly includes a substrate defining a base portion defining a plurality of orifices that extend through the base portion, the plurality of orifices defining a plurality of jet paths extending along and outward from the plurality of orifices, a mesh coupled to the base portion, the mesh defining a plurality of pores aligned with the plurality of jet paths, an encapsulated phase-change layer positioned on the mesh, and a heat-generating device coupled to the mesh opposite the base portion, the heat-generating device defining a bottom surface that is oriented transverse to the plurality of jet paths.

Abstract: A temperature moderation apparatus is structured to be positioned in vehicle passenger compartment. The apparatus includes an outer shell defining an interior of the shell, the wall has an exterior surface structured and positioned for physical contact with a skin surface of a vehicle occupant. The outer shell wall also has a plurality of through-holes formed therein. A phase change material element is positioned within the shell interior. The phase change material element includes a stretchable, thermally-conductive outer wall and a quantity of phase change material positioned therein. A pressurization mechanism is coupled to the phase change material element, the pressurization mechanism is structured to pressurize the phase change material element so as to force portions of the phase change material element to extend from the interior of the shell into associated ones of the through holes and past the outer shell wall exterior surface.

Abstract: A system for protecting a power electronic device is provided. The system includes a power electronic device and a controller. The power electronic device includes a piezoelectric substrate, a metal substrate coupled to the piezoelectric substrate, a semiconductor device, and a bonding layer positioned between the metal substrate and the semiconductor device such that the metal substrate is bonded to the semiconductor device. The controller includes a power supply, one or more processors, and one or more memory modules storing computer readable and executable instructions. The computer readable and executable instructions, when executed by the one or more processors, cause the controller to: receive a temperature of the power electronic device, and provide a voltage determined based on the temperature of the power electronic device across the piezoelectric substrate.

Abstract: A vehicle steering wheel includes a first volume of phase change material and a second volume of phase change material spaced apart from the first volume of phase change material. The first volume of phase change material contains a greater mass of phase change material than the second volume of phase change material. A first wall forms a rim of the steering wheel. The first wall is in direct contact with both the first volume of phase change material and the second volume of phase change material, so as to facilitate heat transfer between the first volume of phase change material and the second volume of phase change material.

Abstract: A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Abstract: A system includes a vehicle having an electronic device, a sensor designed to detect sensor data corresponding to at least one property of the electronic device, an output device designed to output data, and a vehicle network access device designed to transmit the sensor data. The system also includes a machine learning server separate from the vehicle and having a machine learning processor designed to receive the sensor data, and generate, using a machine learning algorithm, a model of the electronic device. The machine learning processor is also designed to determine that a fault is likely to occur with the electronic device by conducting a T squared statistical analysis of the sensor data using the model, and generate a signal to be transmitted to the vehicle network access device when the fault is likely to occur and output information indicating that the fault is likely to occur.

Abstract: Systems and methods for detecting an anomaly in a power semiconductor device are disclosed. A system includes a server computing device and one or more local components communicatively coupled to the server computing device. Each local component includes sensors positioned adjacent to the power semiconductor device for sensing properties thereof Each local component receives data corresponding to one or more sensed properties of the power semiconductor device from the sensors and transmits the data to the server computing device. The server computing device utilizes the data, via a machine learning algorithm, to generate a set of eigenvalues and associated eigenvectors and select a selected set of eigenvalues and associated eigenvectors. Each local component conducts a statistical analysis of the selected set of eigenvalues and associated eigenvectors to determine that the data is indicative of the anomaly.

Abstract: A hybrid bonding layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity, and a ball grid array (BGA) disposed within the MIO layer. The MIO layer and the BGA may be disposed between a pair of bonding layers. The MIO layer and the BGA each have a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the hybrid bonding layer can be transient liquid phase bonded between a substrate and a semiconductor device. The pair of bonding layers may include a first pair of bonding layers with a melting point above the TLP sintering temperature and a second pair of bonding layers with a melting point below the TLP sintering temperature.

Abstract: A cooling bond layer for a power electronics assembly is provided. The cooling bond layer includes a first end, a second end spaced apart from the first end, a metal matrix extending between the first end and the second end, and a plurality of micro-channels extending through the metal matrix from the first end to the second end. The plurality of micro-channels are configured for a cooling fluid to flow through and remove heat from the cooling bond layer. In some embodiments, the plurality of micro-channels are cylindrical shaped micro-channels. In such embodiments, the plurality of micro-channels may have a generally constant average inner diameter along a thickness of the cooling bond layer. In the alternative, the plurality of micro-channels may have a graded average inner diameter along a thickness of the cooling bond layer. In other embodiments, the plurality of micro-channels may have a wire mesh layered structure.

Abstract: A thermal stress compensation layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity disposed between a pair of bonding layers. The thermal stress compensation layer has a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the MIO layer can be transient liquid phase bonded between a metal substrate and a semiconductor device. The pair of bonding layers may comprise a first pair of bonding layers and a second pair of bonding layers with the first pair of bonding layers disposed between the MIO layer and the second pair of bonding layers. The first pair of bonding layers may have a melting point above the TLP sintering temperature and the second pair of bonding layers may have a melting point below the TLP sintering temperature.

Abstract: A multilayer composite bonding material for transient liquid phase bonding a semiconductor device to a metal substrate includes thermal stress compensation layers sandwiched between a pair of bonding layers. The thermal stress compensation layers may include a core layer with a first stiffness sandwiched between a pair of outer layers with a second stiffness that is different than the first stiffness such that a graded stiffness extends across a thickness of the thermal stress compensation layers. The thermal stress compensation layers have a melting point above a sintering temperature and the bonding layers have a melting point below the sintering temperature. The graded stiffness across the thickness of the thermal stress compensation layers compensates for thermal contraction mismatch between the semiconductor device and the metal substrate during cooling from the sintering temperature to ambient temperature.