Patents by Inventor Shakir Ahmed Abbas

Shakir Ahmed Abbas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor structure and method for making same
    Patent number: 4062040
    Abstract: An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.
    Type: Grant
    Filed: March 24, 1977
    Date of Patent: December 6, 1977
    Assignee: IBM Corporation
    Inventors: Shakir Ahmed Abbas, Robert Charles Dockerty
  • Field effect transistor structure and method of making same
    Patent number: 4051273
    Abstract: An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.
    Type: Grant
    Filed: November 26, 1975
    Date of Patent: September 27, 1977
    Assignee: IBM Corporation
    Inventors: Shakir Ahmed Abbas, Robert Charles Dockerty
  • Process for making field effect and bipolar transistors on the same semiconductor chip
    Patent number: 4044452
    Abstract: A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar devices have utility as cross-chip or off-chip drivers or can be utilized for analog circuitry.
    Type: Grant
    Filed: October 6, 1976
    Date of Patent: August 30, 1977
    Assignee: International Business Machines Corporation
    Inventors: Shakir Ahmed Abbas, Robert Charles Dockerty
  • Non-volatile Schottky barrier diode memory cell
    Patent number: 4010482
    Abstract: A non-volatile memory cell that includes a Schottky barrier diode, located over a sub-diffused line or region formed within the substrate, acting as the control element. Information is stored in the device by introducing electrons into a nitride-oxide interface located at the perimeter of the Schottky barrier junction. Thus, the injected electrons are subject to trapping in the nitride-oxide layer, causing depletion in the epi region adjoining the diode interface, thereby influencing the current carrying state of the device.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: March 1, 1977
    Assignee: International Business Machines Corporation
    Inventors: Shakir Ahmed Abbas, Narasipur Gundappa Anantha, Robert Charles Dockerty