Patents by Inventor Shaloo Rakheja

Shaloo Rakheja has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11805715
    Abstract: A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.
    Type: Grant
    Filed: October 15, 2021
    Date of Patent: October 31, 2023
    Assignees: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Lars F. Voss, Adam Conway, Karen Marie Dowling, David Lawrence Hall, Shaloo Rakheja, Kexin Li
  • Publication number: 20220328655
    Abstract: A high electron mobility transistor (HEMT) for high frequency applications comprises: a source and a drain spaced apart on a substrate, each of the source and drain extending vertically away from the substrate; a stack of nanowire or nanosheet heterostructures suspended between the source and the drain and being vertically separated from each other, each of the nanowire or nanosheet heterostructures comprising a channel layer between top and bottom barrier layers; a gate dielectric layer on each nanowire or nanosheet heterostructure; and a gate electrode on each gate dielectric layer. Each of the channel layers comprises a first group III nitride including aluminum, and each of the top and bottom barrier layers comprises a second group III nitride including a higher amount of aluminum than the first group III nitride. The stack includes N of the nanowire or nanosheet heterostructures, where N is an integer from 2 to 50.
    Type: Application
    Filed: April 4, 2022
    Publication date: October 13, 2022
    Inventors: Xiuling Li, Shaloo Rakheja
  • Publication number: 20220123211
    Abstract: A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.
    Type: Application
    Filed: October 15, 2021
    Publication date: April 21, 2022
    Inventors: Lars F. Voss, Adam Conway, Karen Marie Dowling, David Lawrence Hall, Shaloo Rakheja, Kexin Li