Patents by Inventor Shambhu K. Shastry

Shambhu K. Shastry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of epitaxially growing compound semiconductor materials
    Patent number: 4891091
    Abstract: Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.
    Type: Grant
    Filed: June 8, 1987
    Date of Patent: January 2, 1990
    Assignee: GTE Laboratories Incorporated
    Inventor: Shambhu K. Shastry
  • Method of epitaxially growing gallium arsenide on silicon
    Patent number: 4699688
    Abstract: Two-step process of expitaxially growing gallium arsenide on a silicon substrate. A silicon substrate is heated to about 450.degree. C. in a reaction chamber and arsine and triethylgallium are introduced into the chamber. After a thin seed layer of gallium arsenide is grown at a relatively slow rate, the silicon substrate is heated to about 600.degree. C. and a thick buffer layer of gallium arsenide is grown at a relatively fast rate.
    Type: Grant
    Filed: July 14, 1986
    Date of Patent: October 13, 1987
    Assignee: GTE Laboratories Incorporated
    Inventor: Shambhu K. Shastry