Patents by Inventor Shamouil Shamoulian

Shamouil Shamoulian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas
    Patent number: 6572814
    Abstract: A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: June 3, 2003
    Assignee: Applied Materials Inc.
    Inventors: Shamouil Shamoulian, Arnold Kholodenko, Senh Thach, Wing Cheng
  • Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas
    Publication number: 20010024349
    Abstract: A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.
    Type: Application
    Filed: May 24, 2001
    Publication date: September 27, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Shamouil Shamoulian, Arnold Kholodenko, Senh Thach, Wing Cheng