Patents by Inventor Shamsul Arefin KHAN

Shamsul Arefin KHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)
    Patent number: 11670706
    Abstract: In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: June 6, 2023
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Meng-Chia Lee, Ralph N. Wall, Mingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna
  • Trench-gate insulated-gate bipolar transistors
    Patent number: 11056581
    Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: July 6, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna, Meng-Chia Lee, Ralph N. Wall
  • TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
    Publication number: 20200350424
    Abstract: In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Meng-Chia LEE, Ralph N. WALL, Mingjiao LIU, Shamsul Arefin KHAN, Gordon M. GRIVNA
  • Trench-gate insulated-gate bipolar transistors (IGBTs)
    Patent number: 10727326
    Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: July 28, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Meng-Chia Lee, Ralph N. Wall, Mingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna
  • TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
    Publication number: 20190058055
    Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.
    Type: Application
    Filed: January 31, 2018
    Publication date: February 21, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Meng-Chia LEE, Ralph N. WALL, Mingjiao LIU, Shamsul Arefin KHAN, Gordon M. GRIVNA
  • TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
    Publication number: 20190058056
    Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.
    Type: Application
    Filed: January 31, 2018
    Publication date: February 21, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna, Meng-Chia Lee, Ralph N. Wall