Patents by Inventor Shan-An Liu

Shan-An Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for determining chemical mechanical polishing time
    Patent number: 6743075
    Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed.
    Type: Grant
    Filed: January 15, 2003
    Date of Patent: June 1, 2004
    Assignee: Mosel Vitelic, Inc.
    Inventors: Chun-Te Lin, Shan-An Liu, Chung-Ru Wu, Ming-Hsien Lu
  • Method for determining chemical mechanical polishing time
    Publication number: 20030186621
    Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed.
    Type: Application
    Filed: January 15, 2003
    Publication date: October 2, 2003
    Applicant: MOSEL VITELIC, INC., A Taiwanese Corporation
    Inventors: Chun-Te Lin, Shan-An Liu, Chung-Ru Wu, Ming-Hsien Lu