Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.

Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.

Abstract: A semiconductor device includes a channel structure, extending along a first lateral direction, that is disposed over a substrate. The semiconductor device includes a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure. The semiconductor device includes an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure. The semiconductor device includes a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction. The semiconductor device includes an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer. The air gap exposes a second portion of the first gate spacer that extends in the first lateral direction.

Abstract: The present invention is related to a use of prochlorperazine (PCP), or analog thereof for treating a cancer in a subject by influencing membrane proteins and receptors and inducing alterations in the expressions of the surface marker on cancer cells and their derived extracellular vesicles. The invention method offers a novel approach for the treatment and diagnosis of cancer and metastasis. Specific surface markers serve as a potential candidate for cancer-associated extracellular vesicles (EVs) and have applications in diagnosis, prognosis, and therapeutic targeting.

Abstract: A semiconductor device includes a channel structure, extending along a first lateral direction, that is disposed over a substrate. The semiconductor device includes a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure. The semiconductor device includes an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure. The semiconductor device includes a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction. The semiconductor device includes an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer. The air gap exposes a second portion of the first gate spacer that extends in the first lateral direction.

Abstract: The present invention is related to a method and pharmaceutical composition for treating a cartilage damage in a subject (including a human or an animal), particularly osteoarthritis (OA), using extracellular vesicles (EVs) with SOX9 gene, called as “EV-SOX9”. The EV-SOX9 is obtained by encapsulating the SOX9 mRNA or the mRNA of its upstream and downstream gene in EVs, naïve EVs with high expression level of SOX9 mRNA or its upstream and downstream gene from different cell sources, or MSC-derived EV-SOX9, which is obtained by transferring the SOX9 gene or its upstream and downstream gene into a multipotent cell and collecting EVs.

Abstract: The invention provides a feedback control device and a feedback control method thereof. The feedback control device includes an enhancing circuit and a comparator. The enhancing circuit receives a feedback voltage corresponding to an output voltage of a DC-to-DC converter. In an embodiment, the enhancing circuit generates an enhanced feedback voltage based on the feedback voltage, and the comparator uses a comparison result between a reference voltage and the enhanced feedback voltage as a control signal to a feedback control terminal of the DC-to-DC converter. In another embodiment, the enhancing circuit generates an enhanced reference voltage based on the reference voltage, and the comparator uses a comparison result between the enhanced reference voltage and the feedback voltage as the control signal. In yet another embodiment, the comparator uses a comparison result between the enhanced reference voltage and the enhanced feedback voltage as the control signal.

Abstract: A method for fabricating semiconductor devices includes forming a channel structure over a substrate and along a first lateral direction; forming a gate structure extending along a second lateral direction and straddling a portion of the channel structure; forming a gate spacer along a side of the gate structure, the gate spacer having a lateral portion and a vertical portion; growing an epitaxial structure over the channel structure; and forming an air gap within the gate spacer. The air gap is entirely above the epitaxial structure and vertically separated from the epitaxial structure by the lateral portion of the gate spacer.

Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A method and system are provided for assigning a particular record into a chunk of a partition within a non-relational database system. When a number of records in a particular candidate chunk is greater than a particular threshold number, an application performs an auto-balancing operation to split the particular candidate chunk such that records originally assigned to the particular candidate chunk are divided among the particular candidate chunk and a new chunk. Some of the number of records that were originally part of the particular candidate chunk are assigned to a new chunk and the other remaining ones of the number of records that were originally part of the particular candidate chunk remain assigned to the particular candidate chunk.

Abstract: The techniques may include maintaining a thread of events for a plurality of users, where each element of the thread corresponds to an event/activity and includes at least a next field that includes a first subset of the plurality of users and a previous field that includes a second subset of the plurality of users. These techniques may allow new events to be quickly added and prior elements may be updated to reflect the addition. Further, the thread elements may allow the thread to be quickly traversed to identify queried information such that the information may be displayed to a user.

Abstract: A memory device includes first memory circuits and first memory controller. The first memory controller is configured to receive a first command from a first circuitry. When the first memory controller controls a first circuit in the first memory circuits to operate in an enable mode in response to the first command, the first memory controller is further configured to control remaining circuits in the first memory circuits to operate in a data retention mode in response to the first command.

Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.

Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.

Abstract: A method of syncing data across multiple systems includes: receiving a plurality of calendar events from a plurality of independent calendar systems that use different calendar system specific schemas; aggregating the calendar events at a unifying communication system; converting the calendar events from a calendar system specific schema to a unifying communication system specific schema; storing the plurality of calendar events in the unifying communication system specific schema; converting a calendar event received from a non-master calendar system to the master calendar system specific schema; and sending the converted calendar event to the master calendar system; wherein copies of the received calendar events that are formatted according to the calendar system specific schema of the master calendar system are stored with the master calendar system, and copies of the calendar events that are formatted according to the unifying communication system specific schema are stored with the unifying communication

Abstract: An inductive device is provided. The inductive device includes a laminated body and two external electrodes. The laminated body includes an insulator and a plurality of conductive wiring layers stacked in a first direction. The conductive wiring layers are embedded within the insulator, and any two adjacent ones of the conductive wiring layers are electrically connected to each other to form a coiled conductor extending spirally. The external electrodes are disposed on the laminated body and electrically connected to the coiled conductor, and the external electrodes are spaced apart from each other. Each of the external electrodes includes a base plate, a lateral wall, and a plurality of stress dispersing structures extending toward the coiled conductor and protruding from at least one of the base plate and the lateral wall, and the stress dispersing structures are spaced apart from each other and engaged with the laminated body.

Abstract: A power supply system and operating method thereof are provided. The power supply system includes a power generation circuit and a discharge circuit. The power generation circuit is configured to provide an output voltage at an output end when a power is started, and stop providing the output voltage when the power is off. The discharge circuit includes a capacitor, a comparison circuit, and a switch circuit. The comparison circuit is configured to compare a voltage at a detection end and the output voltage at the output end to generate a comparison result. The switch circuit is configured to discharge the output end according to the comparison result when the power is off. The power supply system and an operating method thereof provided by the disclosure can reduce loss when the power is off, so as to improve the operation quality of the circuit.

Abstract: A method and system of data deduplication for data streams in a multi-tenant system. The method receives, at a data accuracy manager, an event from an activity tracking component, determine whether the event is recorded in a probabilistic model that tracks previously received events from the activity tracking component, where the probabilistic model can accurately identify the event has not been previously received with a possible false positive response where the event has been previously received, determines whether information for the event is stored in a metric storage, where the metric storage is a database of metrics derived from the previously received events, and discards the event in response to determining that the event is recorded in the probabilistic model and in the metric storage.

Abstract: A shippable data transfer device includes a data storage medium encased in a chamber surrounded by an anti-tamper casing. The anti-tamper casing includes an anti-tamper layer with identifying elements arranged in a unique or otherwise identifiable pattern. The anti-tamper layer is configured to actively re-arrange, alter, or obscure the identifying elements in response to a breach of the anti-tamper casing.