Abstract: A solar cell includes a semiconductor substrate, one or more bus bar electrode, and a plurality of finger electrodes. The bus bar electrode and the finger electrodes are disposed on the semiconductor substrate. Conventionally, in a process of forming the finger electrodes by utilizing screen printing, offset may occur. Consequently, the finger electrodes cannot be connected to the bus bar electrode. According to the provided solar cell, the bus bar electrode is formed by using patterned silver and aluminum, to manufacture a wider bus bar electrode than the bus bar electrode in the conventional solar cell without increasing silver consumption, thereby resolving the problem of offset.

Abstract: A solar cell includes a semiconductor substrate, a bus-bar electrode, a plurality of finger electrodes, and a heavily doped layer. The semiconductor substrate has a surface. The bus-bar electrode is on the surface of the semiconductor substrate and extending along a first direction. The finger electrodes are on the surface of the semiconductor substrate and extending along a second direction. One of two ends of each of the finger electrodes is connected to the bus-bar electrode. An angle created by the first direction and the second direction is less than 180 degrees. The heavily doped layer is formed on the surface of the semiconductor substrate and includes a first portion and a plurality of second portions. The first portion is extending along the first direction. Each of the second portions is extending from the first portion along the second direction and beneath the corresponding finger electrode.

Abstract: A solar cell and manufacturing method of back electrodes thereof are disclosed. The method includes a step of implementing a screen printing process to a semiconductor substrate. The method also includes a step of measuring a deviation which exists between laser ablation recesses and back electrodes in the screen printing process. The method further includes a step of adjusting the distance between the laser ablation recess and the back electrode according to the deviation. After adjusting, a deviation between laser ablation recesses and back electrodes will be controlled to a narrower range when the screen printing process is implemented to another semiconductor substrate. Thus, the defect is caused by the back electrodes incompletely covering the laser ablation recesses can be improved significantly.

Abstract: A solar cell, including a semiconductor substrate, a first-type dopant layer and a second-type dopant layer that are respectively disposed on two surfaces of the semiconductor substrate, a first passivation layer formed on the first-type dopant layer, a first anti-reflection layer formed on the first passivation layer, a plurality of back electrodes passing through the first anti-reflection layer and the first passivation layer, a second passivation layer formed on the second-type dopant layer, a second anti-reflection layer formed on the second passivation layer, and a plurality of front surface electrodes passing through the second anti-reflection layer and the second passivation layer. Widths of the back electrodes formed on a central area are smaller than those of the back electrodes formed on side areas.

Abstract: A back contact solar cell includes a solar cell substrate, an intrinsic layer, a second conductive type semiconductor layer and an electrode layer. The solar cell substrate includes a substrate body doped with a first conductive type semiconductor and a plurality of first conductive type semiconductor doped regions. The first conductive type semiconductor doped region is formed on a back side of the substrate body. The intrinsic layer is formed on the back side, and includes a plurality of first openings to expose the first conductive type semiconductor doped regions. The second conductive type semiconductor layer is deposited on the intrinsic layer, and includes a plurality of second openings correspond the first openings. The electrode layer includes a plurality of first electrode regions and a second electrode region. The first electrode regions are disposed on the first conductive type semiconductor doped regions.