Abstract: A tiled electronic device includes a first electronic device and a second electronic device adjacent to each other. The first electronic device includes a first substrate having a first upper surface, a first lower surface, and a first side surface; and a first flexible substrate including a first upper portion, a first lower portion, and a first connection portion. The first upper portion is disposed corresponding to the first upper surface. The first lower portion is disposed corresponding to the first lower surface. The first connection portion is disposed corresponding to the first side surface. The second electronic device includes a second substrate having a second upper surface, a second lower surface, and a second side surface. The second side surface is opposite and adjacent to the first side surface. The first connection portion is located between the first side surface and the second side surface.

Abstract: A tiled electronic device includes a first electronic device and a second electronic device adjacent to each other. The first electronic device includes a first substrate having a first upper surface, a first lower surface, and a first side surface; and a first flexible substrate including a first upper portion, a first lower portion, and a first connection portion. The first upper portion is disposed corresponding to the first upper surface. The first lower portion is disposed corresponding to the first lower surface. The first connection portion is disposed corresponding to the first side surface. The second electronic device includes a second substrate having a second upper surface, a second lower surface, and a second side surface. The second side surface is opposite and adjacent to the first side surface. The first connection portion is located between the first side surface and the second side surface.

Abstract: The present invention relates to a method for fabricating thin film transistors (TFTs), which includes the following steps: forming a semi-conductive layer on a substrate; forming a patterned photoresist layer with a first thickness and a second thickness on the semi-conductive layer; pattering the semi-conductive layer by using the patterned photoresist layer as a mask to form a patterned semi-conductive layer; removing the second thickness of the patterned photoresist layer; performing a first ion doping process on the patterned semi-conductive layer by using the first thickness of the patterned photoresist layer as a mask; removing the first thickness of the patterned photoresist layer; and forming a dielectric layer and a gate on the patterned semi-conductive layer. The present invention also discloses a method for fabricating an array substrate including aforementioned TFTs.

Abstract: A method of forming a display device is provided.

Abstract: A method of forming a display device is provided.

Abstract: The present invention relates to a method for fabricating thin film transistors (TFTs), which includes the following steps: forming a semi-conductive layer on a substrate; forming a patterned photoresist layer with a first thickness and a second thickness on the semi-conductive layer; pattering the semi-conductive layer by using the patterned photoresist layer as a mask to form a patterned semi-conductive layer; removing the second thickness of the patterned photoresist layer; performing a first ion doping process on the patterned semi-conductive layer by using the first thickness of the patterned photoresist layer as a mask; removing the first thickness of the patterned photoresist layer; and forming a dielectric layer and a gate on the patterned semi-conductive layer. The present invention also discloses a method for fabricating an array substrate including aforementioned TFTs.

Abstract: A method of forming a display device is provided.

Abstract: This invention provides a method for fabricating a polysilicon thin film layer, which performs a gas plasma treatment on channel regions defined in the polysilicon thin film layer after the polysilicon thin film layer is formed on a substrate. Threshold voltages for polysilicon thin film transistors formed subsequently are thus adjusted by the gas plasma treatment. A gate insulating layer is formed on the polysilicon thin film layer after the gas plasma treatment.

Abstract: A display panel and an electric apparatus with ESD protection effect are disclosed. The display panel comprises a panel substrate and patterned conductive layers stacked over the panel substrate. The display panel also has an array display area and a driving area. A first conductive layer of the patterned conductive layers comprises substantially repetitive patterns inside the driving area. The first conductive layer also has a dummy bar formed beside an edge pattern of the substantially repetitive patterns.

Abstract: The invention provides a method for fabricating a low-temperature polysilicon (LTPS) driving circuit and thin film transistor. The method includes: providing a substrate, forming an active layer, forming a gate insulating layer, forming a dielectric layer having an extending portion and forming a gate electrode. The extending portion of the dielectric layer and the gate electrode are formed during the same step, and they can serve as a mask during a later doping process so that a lightly doped source/drain region and a source/drain region are formed during the same time without forming extra masks.

Abstract: A method of testing a drive circuit including a scan line drive circuit and a data line drive circuit for driving a display is disclosed. The display may include a plurality of scan lines and a plurality of data lines, each of said scan lines including an initial terminal coupled to said scan line drive circuit, each of said data lines including an initial terminal coupled to said data line drive circuit. The method includes: coupling each of said scan lines and each of said data lines to a first testing pad and a second testing pad respectively; sending a first testing signal to an input terminal of said scan line drive circuit and sending a second testing signal to an input terminal of said data line drive circuit; and testing at said first testing pad and said second testing pad respectively.

Abstract: A pixel testing method is provided. The pixel testing method is adapted to measure device parameters within each pixel of a display. Before plating a lighting device into each pixel, a capacitor is formed such that one end of the capacitor is connected to an open-circuit terminal of an electronic device while the other end of the capacitor is connected to an added common line (or the original scan line or data line of the display). The parameters of the electronic device connected to the lighting device are tested through a charging/discharging of the capacitor so that all the devices within a pixel can be tested before forming organic functional layer in every pixel.

Abstract: A method and an apparatus for testing a plurality of driver circuits of an AMOLED before OLEDs are implanted are provided. The method and the apparatus select one specific driver circuit to be tested and dispose a conductive board above the array glass of the OLED to form a capacitor. By using the data line, the scan line, and the power line of an AMOLED, the present invention is able to input and retrieve signals from driver circuits for analyzing each of them is normal or not.

Abstract: A method of testing a drive circuit including a scan line drive circuit and a data line drive circuit for driving a display is disclosed. The display may include a plurality of scan lines and a plurality of data lines, each of said scan lines including an initial terminal coupled to said scan line drive circuit, each of said data lines including an initial terminal coupled to said data line drive circuit. The method includes: coupling each of said scan lines and each of said data lines to a first testing pad and a second testing pad respectively; sending a first testing signal to an input terminal of said scan line drive circuit and sending a second testing signal to an input terminal of said data line drive circuit; and testing at said first testing pad and said second testing pad respectively.

Abstract: A pixel testing method is provided. The pixel testing method is adapted to measure device parameters within each pixel of a display. Before plating a lighting device into each pixel, a capacitor is formed such that one end of the capacitor is connected to an open-circuit terminal of an electronic device while the other end of the capacitor is connected to an added common line (or the original scan line or data line of the display). The parameters of the electronic device connected to the lighting device are tested through a charging/discharging of the capacitor so that all the devices within a pixel can be tested before forming organic functional layer in every pixel.

Abstract: A method and an apparatus for testing a plurality of driver circuits of an AMOLED before OLEDs are implanted are provided. The method and the apparatus select one specific driver circuit to be tested and dispose a conductive board above the array glass of the OLED to form a capacitor. By using the data line, the scan line, and the power line of an AMOLED, the present invention is able to input and retrieve signals from driver circuits for analyzing each of them is normal or not.