Patents by Inventor Shan Lan

Shan Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070080338
    Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.
    Type: Application
    Filed: December 12, 2006
    Publication date: April 12, 2007
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Tsun Neng Yang, Shan Lan
  • Publication number: 20060043397
    Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.
    Type: Application
    Filed: August 25, 2004
    Publication date: March 2, 2006
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Tsun Yang, Shan Lan
  • Publication number: 20060043383
    Abstract: The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.
    Type: Application
    Filed: August 25, 2004
    Publication date: March 2, 2006
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Tsun Yang, Shan Lan
  • Publication number: 20060043884
    Abstract: The present white light-emitting device includes a substrate with first window layer, a trisilicon tetranitride layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the trisilicon tetranitride layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the trisilicon tetranitride layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method first forms a sub-stoichiometric silicon nitride (SiNx) layer on a substrate, wherein the numerical ratio (x) of nitrogen atoms to silicon atoms is smaller than 4/3. A thermal treating process is then performed to transform the sub-stoichiometric SiNx layer into a trisilicon tetranitride layer with a plurality of silicon nanocrystals distributed therein. The thickness of the trisilicon tetranitride layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 1 and 10 nanometers.
    Type: Application
    Filed: August 25, 2004
    Publication date: March 2, 2006
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Tsun Yang, Shan Lan
  • Patent number: 6745901
    Abstract: A wafer cassette for storing and transporting wafers that is equipped with sensors such as piezoelectric sensors or capacitance sensors on the surface of the dividers for sensing the presence or absence of wafers positioned on top of the dividers is described. The sensors are capable of detecting any defective placement of wafers such as a cross-slot placement or a double placement such that the condition can be corrected by a machine operator and a wafer cassette can be stopped before it is loaded into an internal buffer of a process machine.
    Type: Grant
    Filed: October 12, 2001
    Date of Patent: June 8, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuen-Ei Chen, Hung-Shan Lan
  • Publication number: 20030070960
    Abstract: A wafer cassette for storing and transporting wafers that is equipped with sensors such as piezoelectric sensors or capacitance sensors on the surface of the dividers for sensing the presence or absence of wafers positioned on top of the dividers is described. The sensors are capable of detecting any defective placement of wafers such as a cross-slot placement or a double placement such that the condition can be corrected by a machine operator and a wafer cassette can be stopped before it is loaded into an internal buffer of a process machine.
    Type: Application
    Filed: October 12, 2001
    Publication date: April 17, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuen-Ei Chen, Hung-Shan Lan