Abstract: A network base station can select, for each of one or more attached terminals, a respective downlink transmission mode (DTM) based at least in part on respective channel condition information (CCI). The base station can determine a subframe allocation of DTMs to subframes of a radio frame, and transmit downlink data to terminals based the subframe allocation. Additionally or alternatively, the base station can receive load information from a second base station associated with a different access network and determine the subframe allocation based on the load information. The subframe allocation can associate a specific access network with each subframe. Additionally or alternatively, the base station can send the subframe allocation to the second base station. Additionally or alternatively, the base station can determine a proportion of GBR traffic of a particular DTM, determine a reference-signal transmission rate associated with that DTM, and transmit reference signals accordingly.

Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.

Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.

Abstract: The present white light-emitting device includes a substrate with first window layer, a trisilicon tetranitride layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the trisilicon tetranitride layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the trisilicon tetranitride layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method first forms a sub-stoichiometric silicon nitride (SiNx) layer on a substrate, wherein the numerical ratio (x) of nitrogen atoms to silicon atoms is smaller than 4/3. A thermal treating process is then performed to transform the sub-stoichiometric SiNx layer into a trisilicon tetranitride layer with a plurality of silicon nanocrystals distributed therein. The thickness of the trisilicon tetranitride layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 1 and 10 nanometers.

Abstract: The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.

Abstract: A wafer cassette for storing and transporting wafers that is equipped with sensors such as piezoelectric sensors or capacitance sensors on the surface of the dividers for sensing the presence or absence of wafers positioned on top of the dividers is described. The sensors are capable of detecting any defective placement of wafers such as a cross-slot placement or a double placement such that the condition can be corrected by a machine operator and a wafer cassette can be stopped before it is loaded into an internal buffer of a process machine.

Abstract: A wafer cassette for storing and transporting wafers that is equipped with sensors such as piezoelectric sensors or capacitance sensors on the surface of the dividers for sensing the presence or absence of wafers positioned on top of the dividers is described. The sensors are capable of detecting any defective placement of wafers such as a cross-slot placement or a double placement such that the condition can be corrected by a machine operator and a wafer cassette can be stopped before it is loaded into an internal buffer of a process machine.