Abstract: A load control device may be configured to control multiple characteristics of one or more electrical loads such as the intensity and color of a lighting load. The load control device may switch from controlling one characteristic of the electrical loads to controlling another characteristic of the electrical loads based on the position of one or more components of the load control device. Such a position may be manipulated by moving the one or more components relative to an idle position of the load control device. The load control device may be a wall-mounted device or a battery-powered remote control device.

Abstract: The invention provides an exposure method of semiconductor patterns, which comprises the following steps: providing a substrate, performing a first exposure step with a first photomask, forming a first pattern in a first region on the substrate, and performing a second exposure step with a second photomask, forming a second pattern in a second region on the substrate, the first pattern and the second pattern are in contact with each other, and at an interface of the first region And the second region, the first pattern and the second pattern are aligned with each other.

Abstract: A semiconductor device includes a substrate, a first oxide layer and a second oxide layer. The substrate has a first region and a second region. The first oxide layer is disposed on the first region. The first oxide layer includes a first thermal oxide layer and a first deposited oxide layer, and a portion of the first thermal oxide layer is formed by a pad oxide layer. The second oxide layer is disposed on the second region. The second oxide layer includes a second thermal oxide layer and a second deposited oxide layer.

Abstract: Provided is a transistor structure including a gate, a gate dielectric layer, a source region and a drain region. The gate is disposed on a substrate. The gate dielectric layer is disposed between the gate and the substrate. The source region and the drain region are respectively disposed at two opposite sides of the gate. From a top view above the substrate, the gate has two opposite edges in a first direction intersecting a second direction where a channel length of the transistor structure is located, and each of the two opposite edges has a non-linear shape.

Abstract: A semiconductor structure includes a substrate comprising a first well region of a first conductive type, a second well region of a second conductive type, and a junction between the first well region and the second well region, wherein the first conductive type and the second conductive type are complementary. An isolation structure is formed in the substrate to define a plurality of first dummy diffusions and second dummy diffusions and at least a first active region in the first well region, wherein the first dummy diffusions are adjacent to the junction, the first dummy diffusions are between the second dummy diffusions and the first active region, and wherein the second dummy diffusions respectively comprise a metal silicide portion. A plurality of first dummy gates are disposed on the first dummy diffusions and completely cover the first dummy diffusions, respectively.

Abstract: The invention provides a semiconductor structure, which comprises a first silicon substrate with a display region and a driving region defined thereon, a circuit layer located on the first silicon substrate, a plurality of light emitting elements located on the display region of the first silicon substrate, a driving chip located on the driving region of the first silicon substrate and electrically connected with the circuit layer, and a second silicon substrate located on the driving chip.

Abstract: The present disclosure relates to the technical field of electronic materials. A low-dielectric wollastonite based low-temperature co-fired ceramic material and a preparation method therefor are provided. The formula of the ceramic material is: CaxSiO3+awt % SiO2+bwt % R2O+cwt % Bi2O3+dwt % B2O3+ewt % MO, wherein 0.9?x?1.1, 0<a?30, 1?b?5, 0<c?3, 0<d?6, 0?e?10, R2O is at least one of Li2O and K2O, and MO is one or more of ZnO, MgO, BaO, CoO, CuO, La2O3 and MnO2. The low-temperature co-fired ceramic material provided by the present disclosure satisfies the requirements of low dielectric, low loss and low-temperature sintering, and can be applied to the fields of millimeter wave LTCC devices and the like.

Abstract: A load control device may be configured to control multiple characteristics of one or more electrical loads such as the intensity and color of a lighting load. The load control device may switch from controlling one characteristic of the electrical loads to controlling another characteristic of the electrical loads based on the position of one or more components of the load control device. Such a position may be manipulated by moving the one or more components relative to an idle position of the load control device. The load control device may be a wall-mounted device or a battery-powered remote control device.

Abstract: A load control device may be configured to control multiple characteristics of one or more electrical loads such as the intensity and color of a lighting load. The load control device may switch from controlling one characteristic of the electrical loads to controlling another characteristic of the electrical loads based on the position of one or more components of the load control device. Such a position may be manipulated by moving the one or more components relative to an idle position of the load control device. The load control device may be a wall-mounted device or a battery-powered remote control device.

Abstract: A load control system may include control devices for controlling electrical loads. The control devices may include load control devices, such as a lighting device for controlling an amount of power provided to a lighting load, and controller devices, such as a remote control device configured to transmit digital messages for controlling the lighting load via the load control device. The remote control device may communicate with the lighting devices via a hub device. The remote control device may detect a user interface event, such as a button press or a rotation of the remote control device. The remote control device or the hub device may determine whether to transmit digital messages as unicast messages or multicast messages based on the type of user interface event detected. The remote control device, or other master device, may synchronize and/or toggle an on/off state of lighting devices in the load control system.

Abstract: A method for forming alignment keys of a semiconductor structure includes: forming an oxide pad layer and a passivation layer on a substrate; forming a patterned photoresist layer on the passivation layer, and using the patterned photoresist layer as a mask to remove part of the oxide pad layer and passivation layer and expose the substrate surface in the medium voltage and alignment mark regions; forming oxide portions on the exposed substrate surface, and the oxide portions extending into the first depth of the substrate; forming deep doped wells in the low voltage and medium voltage regions; thinning the oxide portions; forming high-voltage doped wells in the high voltage and alignment mark regions; performing an etching process on the high voltage and alignment mark regions to form a second trench, as an alignment key, having a second depth greater than the first depth in the alignment mark region.

Abstract: Methods and systems are described herein for receiving a document (e.g., a technical paper), identifying sections of the document, and inputting each section into a corresponding machine learning model that has been trained using previously reviewed documents to process text and other data within a specific section. The machine learning model may output a score indicating the degree of compliance to a particular standard of a particular document. In addition, various recommendations for content to be added to the document may be identified and provided to the user along with the score for each section.

Abstract: A load control system may include control devices for controlling electrical loads. The control devices may include load control devices, such as a lighting device for controlling an amount of power provided to a lighting load, and controller devices, such as a remote control device configured to transmit digital messages for controlling the lighting load via the load control device. The remote control device may communicate with the lighting devices via a hub device. The remote control device may detect a user interface event, such as a button press or a rotation of the remote control device. The remote control device or the hub device may determine whether to transmit digital messages as unicast messages or multicast messages based on the type of user interface event detected. The remote control device, or other master device, may synchronize and/or toggle an on/off state of lighting devices in the load control system.

Abstract: A semiconductor structure comprises a substrate having a first well region of a first conductive type, a second well region of a second conductive type, and a junction between the first well region and the second well region. The first conductive type and the second conductive type are complementary. A plurality of first dummy structures and second dummy structures and at least a first active region are defined in the first well region by an isolation structure. The first dummy structures are adjacent to the junction and respectively comprise a first metal silicide region and a first doped region of the first conductive type and between the first metal silicide region and the first well region. The first dummy structures are between the second dummy structures and the junction. The second dummy structures respectively comprise a second metal silicide region that direct contacts the first well region.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate, a first well region of a first conductive type and a second well region of a second conductive type disposed in the substrate. The first conductive type and the second conductive type are complementary. A plurality of first dummy structures are disposed in the first well region and arranged along a junction between the first well region and the second well region. The first dummy structures respectively include a first conductive region and a first doped region disposed between the first conductive region and the first doped region.

Abstract: Methods and systems are described herein for receiving a document (e.g., a technical paper), identifying sections of the document, and inputting each section into a corresponding machine learning model that has been trained using previously reviewed documents to process text and other data within a specific section. The machine learning model may output a score indicating the degree of compliance to a particular standard of a particular document. In addition, various recommendations for content to be added to the document may be identified and provided to the user along with the score for each section.

Abstract: A semiconductor device includes a semiconductor substrate, a recess, a first gate oxide layer, and a gate structure. The semiconductor substrate includes a first region and a second region adjacent to the first region. The recess is disposed in the first region of the semiconductor substrate, and an edge of the recess is located at an interface between the first region and the second region. At least a part of the first gate oxide layer is disposed in the recess. The first gate oxide layer includes a hump portion disposed adjacent to the edge of the recess, and a height of the hump portion is less than a depth of the recess. The gate structure is disposed on the first region and the second region of the semiconductor substrate, and the gate structure overlaps the hump portion of the first gate oxide layer in a vertical direction.

Abstract: A load control system may include control devices for controlling electrical loads. The control devices may include load control devices, such as a lighting device for controlling an amount of power provided to a lighting load, and controller devices, such as a remote control device configured to transmit digital messages for controlling the lighting load via the load control device. The remote control device may communicate with the lighting devices via a hub device. The remote control device may detect a user interface event, such as a button press or a rotation of the remote control device. The remote control device or the hub device may determine whether to transmit digital messages as unicast messages or multicast messages based on the type of user interface event detected. The remote control device, or other master device, may synchronize and/or toggle an on/off state of lighting devices in the load control system.