Abstract: The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer.

Abstract: A PERC solar cell selective emitter includes a silicon wafer, first and second doped regions and a laser doped region with doped layers. First doped regions are located between the doped regions of each doped layer, and each second doped region is located between two adjacent doped layers. The PERC solar cell includes the selective emitter, a front anti-reflective layer on the surface of a front passivation layer, and a positive electrode. The positive electrode includes first silver paste layers on the surfaces of the laser doped regions and second silver paste layers on the surface of the front anti-reflective layer corresponding to the first doped regions. The second silver paste layers are in electrical contact with the first silver paste layers. Damage of laser to silicon wafers is reduced, compounding in silver paste areas is reduced, an open circuit voltage is increased, and battery efficiency is improved.

Abstract: The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer.