Abstract: This disclosure relates to the technical field of marine environment prediction, and in particular, to a method and system for multimodal fusion prediction of a marine environment based on digital twinning. The method includes the following steps: capturing spatiotemporal correlation features of multimodal data of the marine environment based on a dynamic multimodal graph neural network; performing multi-scale feature fusion on the spatiotemporal correlation features by using a multi-scale gating unit to obtain a comprehensive feature representation; predicating the comprehensive feature representation by using a hybrid time-series prediction framework to obtain preliminary marine environment prediction data, including short-term dynamic modeling and long-term trend modeling; and performing noise fitting on the preliminary marine environment prediction data by using a generative adversarial network to generate the final marine environment prediction data.

Abstract: The present disclosure is directed to compounds of Formula (I): where R1, R2, and R3 are as defined herein. The present disclosure is also directed to a pharmaceutical composition comprising these compounds, as well as the use of these compounds for the treatment of cancer or the inhibition of Tankyrase 2 (TNKS2) activity.

Abstract: The present disclosure provides a mixed-phase fluid mass flow measurement method and a throttling-type photon quantum mixed-phase flowmeter, after real-time acquisition of the actual pressure value, actual temperature value, and the actual photon quantum transmission quantity under the influence of the to-be-measured mixed-phase fluid for at least three photon quantum energy levels at the inlet pipe section of the throttling-type photon quantum mixed-phase flowmeter, and after the acquisition of the actual pressure difference between the inlet pipe section and the throat pipe section, the present disclosure will directly calculate the actual mass flow rate of the fluid media of each phase in the to-be-measured mixed-phase fluid based on the actual photon quantum transmission quantities for the at least three photon quantum energy levels, the photon quantum transmission quantity without medium, and the obtained actual pressure value, actual temperature value, and actual pressure difference.

Abstract: Polypeptides comprising a cell penetrating amino acid sequence and an interferon regulatory factor 5 (IRF5) targeting amino acid sequence are disclosed, where the IRF5 targeting amino acid sequence is one or more of RHATRHG (SEQ ID NO:1), KSRDFRL (SEQ ID NO:2) and GPRDMPP (SEQ ID NO:3), as well as methods of using these polypeptides to treat diseases, such as autoimmune and inflammatory diseases.

Abstract: Polypeptides comprising a cell penetrating amino acid sequence and an interferon regulatory factor 5 (IRF5) targeting amino acid sequence are disclosed, where the IRF5 targeting amino acid sequence is one or more of RHATRHG (SEQ ID NO:1), KSRDFRL (SEQ ID NO:2) and GPRDMPP (SEQ ID NO:3), as well as methods of using these polypeptides to treat diseases, such as autoimmune and inflammatory diseases.

Abstract: A waist-shaped throttling photon quantum miscible phase flowmeter includes a photon quantum phase fraction device, a photon quantum source, and a photon quantum detector distributed opposite to the photon quantum source, for detecting an energy signal of a single photon quantum emitted by the photon quantum source. A flow channel inside the photon quantum phase fraction device includes a first variable-diameter section, a waist-shaped throat section having a waist-shaped-hole shaped cross section in a direction perpendicular to an axial direction of the flow channel, and a second variable-diameter section that are connected in sequence. Inner diameters of the first and second variable-diameter sections gradually decrease from an end away from the throat section to an end close to the throat section. The photon quantum source and the photon quantum detector are both provided on the photon quantum phase fraction device and located at the throat section.

Abstract: Disclosed is a method for determining 224Ra in a sediment by using a pulse ionization chamber emanometer, which belongs to the technical field of analysis and measurement. A pulse ionization chamber emanometer (PIC), a new emanometer, is used. Based on the half-life characteristics of different radon isotopes, one can separate the 220Rn activity from the total counts by dual counting. The resulting 220Rn measurement then can be used to determine the 224Ra activity in sediment according to the principle of secular radioactive equilibrium.

Abstract: A method of operating a memory device that includes the steps of receiving a read command and a target address in a non-volatile memory (NVM) array, in which the NVM array is divided into a plurality of blocks based on row and column addresses, performing a read operation on NVM cells in the target address and coupling an output of each NVM cell read to a sensing circuit, generating a local reference voltage based on a base reference voltage and an adjustment reference voltage corresponding to the target address of the NVM cells being read and a block that the NVM cells belong thereto, and offsetting the base reference voltage with the adjustment reference voltage, and coupling the local reference voltage to the sensing circuit. Other embodiments are also described.

Abstract: Disclosed are compounds for inhibiting lipoamide dehydrogenase (Lpd), and methods of treating tuberculosis.

Abstract: Disclosed is a method for determining 224Ra in a sediment by using a pulse ionization chamber emanometer, which belongs to the technical field of analysis and measurement. A pulse ionization chamber emanometer (PIC), a new emanometer, is used. Based on the half-life characteristics of different radon isotopes, one can separate the 220Rn activity from the total counts by dual counting. The resulting 220Rn measurement then can be used to determine the 224Ra activity in sediment according to the principle of secular radioactive equilibrium.

Abstract: A method of operating a memory device that includes the steps of receiving a read command and a target address in a non-volatile memory (NVM) array, in which the NVM array is divided into a plurality of blocks based on row and column addresses, performing a read operation on NVM cells in the target address and coupling an output of each NVM cell read to a sensing circuit, generating a local reference voltage based on a base reference voltage and an adjustment reference voltage corresponding to the target address of the NVM cells being read and a block that the NVM cells belong thereto, and offsetting the base reference voltage with the adjustment reference voltage, and coupling the local reference voltage to the sensing circuit. Other embodiments are also described.

Abstract: A memory device including a reference voltage (VREF) generator and method for operating the same to improve memory sensing margin, and extend operational temperature range and life of the device are disclosed. Generally, the device further includes an array of non-volatile memory cells divided into a plurality of blocks, a sensing circuit coupled to the array to receive and compare memory signals therefrom to the VREF to read data from the cells. The Local reference voltage generator is configured to provide one of a number of reference voltages to the sensing circuit based on which of the blocks is being read. The array can be divided based on row and column addresses of cells in the blocks. Where the cells include 1T1C ferroelectric random access memory (F-RAM) cells, and the reference voltages are selected based on a lowest P-term or highest U-term of the cells in the block being read.

Abstract: Polypeptides comprising a cell penetrating amino acid sequence and an interferon regulatory factor 5 (IRF5) targeting amino acid sequence are disclosed, where the IRF5 targeting amino acid sequence is one or more of RHATRHG (SEQ ID NO:1), KSRDFRL (SEQ ID NO:2) and GPRDMPP (SEQ ID NO:3), as well as methods of using these polypeptides to treat diseases, such as autoimmune and inflammatory diseases.

Abstract: A memory device including a reference voltage (VREF) generator and method for operating the same to improve memory sensing margin, and extend operational temperature range and life of the device are disclosed. Generally, the device further includes an array of non-volatile memory cells divided into a plurality of blocks, a sensing circuit coupled to the array to receive and compare memory signals therefrom to the VREF to read data from the cells. The Local reference voltage generator is configured to provide one of a number of reference voltages to the sensing circuit based on which of the blocks is being read. The array can be divided based on row and column addresses of cells in the blocks. Where the cells include 1T1C ferroelectric random access memory (F-RAM) cells, and the reference voltages are selected based on a lowest P-term or highest U-term of the cells in the block being read.

Abstract: A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device with a reduced number of masking and etching steps is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate to expose a portion of the surface, and forming first spacers on sidewalls of the opening. A conductive layer is formed on the portion of the surface exposed in the opening and separated from the first spacers on the sidewalls of the opening by a gap therebetween. A bottom electrode of a ferroelectric capacitor is formed over the conductive layer and in the gap laterally of the conductive layer, a ferroelectric dielectric formed on the bottom electrode between the first spacers, and a top electrode formed on the ferroelectric dielectric.

Abstract: A memory device and method of operating the same are disclosed. Generally, the device includes an array of Ferro-electric Random Access Memory cells. Each cell includes a first transistor coupled between a bit-line and a storage node (SN) and controlled by a first wordline (WL1), a second transistor coupled between a reference line and the SN and controlled by a second wordline (WL2), and a ferro-capacitor coupled between the SN and a plateline. The device further includes a sense-amplifier coupled to the bit-line and reference line, and a processing-element configured to issue control signals to WL1, WL2, the plateline and the sense-amplifier. The cell is configured and operated to generate a bit-level reference in which a first voltage pulse is applied to the plateline during a read cycle for the data pulse and a second voltage pulse serves as a reference pulse and as a clear pulse.

Abstract: Disclosed herein is an apparatus that includes a ferroelectric capacitor disposed on a damascene barrier film, and fabrication methods thereof. The damascene barrier film includes a hydrogen barrier region and an oxygen barrier region, with the oxygen barrier being in contact with a bottom surface of the ferroelectric capacitor. Other embodiments are also disclosed herein.

Abstract: A memory device and method of operating the same are disclosed. Generally, the device includes an array of Ferro-electric Random Access Memory cells. Each cell includes a first transistor coupled between a bit-line and a storage node (SN) and controlled by a first wordline (WL1), a second transistor coupled between a reference line and the SN and controlled by a second wordline (WL2), and a ferro-capacitor coupled between the SN and a plateline. The device further includes a sense-amplifier coupled to the bit-line and reference line, and a processing-element configured to issue control signals to WL1, WL2, the plateline and the sense-amplifier. The cell is configured and operated to generate a bit-level reference in which a first voltage pulse is applied to the plateline during a read cycle for the data pulse and a second voltage pulse serves as a reference pulse and as a clear pulse.

Abstract: Structure and method of fabrication of F-RAM cells are described. The F-RAM cell include ferroelectric capacitors forming over and with a pre-patterned barrier structure which has a planarized/chemically and/or mechanically polished top surface. The pre-patterned barrier structure includes multiple oxygen barriers having a structure of a bottom electrode layer over an oxygen barrier layer. The bottom electrode layer forms at least a part of the bottom electrode of the ferroelectric capacitor formed thereon.

Abstract: A memory device and method of operating the same are disclosed. Generally, the device includes an array of Ferro-electric Random Access Memory cells. Each cell includes a first transistor coupled between a bit-line and a storage node (SN) and controlled by a first wordline (WL1), a second transistor coupled between a reference line and the SN and controlled by a second wordline (WL2), and a ferro-capacitor coupled between the SN and a plateline. The device further includes a sense-amplifier coupled to the bit-line and reference line, and a processing-element configured to issue control signals to WL1, WL2, the plateline and the sense-amplifier. The cell is configured and operated to generate a bit-level reference in which a first voltage pulse is applied to the plateline during a read cycle for the data pulse and a second voltage pulse serves as a reference pulse and as a clear pulse.