Abstract: A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically connected with the first semiconductor layer; and the second electrode electrically connected with the second semiconductor layer; the second electrode fills the opening portion, and the position where the second electrode contacts the transparent conductive layer is arranged with a recessed portion, and the second electrode is embedded in the transparent conductive layer.

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

Abstract: A light-emitting diode chip includes a first semiconductor layer, a second semiconductor layer and an active layer between them; an dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer; a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.

Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.

Abstract: A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer.

Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.

Abstract: A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically connected with the first semiconductor layer; and the second electrode electrically connected with the second semiconductor layer; the second electrode fills the opening portion, and the position where the second electrode contacts the transparent conductive layer is arranged with a recessed portion, and the second electrode is embedded in the transparent conductive layer.

Abstract: A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.

Abstract: An LED used for plant illumination, comprising a substrate (11), a PN-junction light-emitting part arranged on the substrate (11). The light-emitting part has a strained light-emitting layer with component formula of GaXIn(1?X)AsYP(1?Y) (0<X<1 and 0<Y<1). The light-emitting part has a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer. The structure adopts a new light-emitting material GaXIn(1?X)AsYP(1?Y), which can significantly improve the light-emitting efficiency by 50%-100%.

Abstract: The invention relates to a ceramic binary material and to a method for the production thereof. The material has piezoelectric properties and has a composition of the formula (1?x)(Bi0.5Na0.5TiO3)×(K0.5Na0.5NbO3), where 0<x?0.15. Furthermore, the invention relates to a component comprising said material.

Abstract: The invention relates to a ceramic binary material and to a method for the production thereof. The material has piezoelectric properties and has a composition of the formula (1?x)(Bi0.5Na0.5TiO3)x(K0.5Na0.5NbO3), where 0<x?0.15. Furthermore, the invention relates to a component comprising said material.

Abstract: A resonance converter and a synchronous rectification driving method thereof are provided. The resonance converter includes a switch circuit having at least two first switches, a resonance circuit having a resonance frequency, a transformer, and a full-wave rectification circuit having two second switches each of which has a drain and a source and generates a channel resistance voltage when a current flows through the drain and the source. The synchronous rectification driving method includes steps as follow.

Abstract: The present invention provides a continuous conductive planar coil structure. The continuous conductive planar coil structure includes a first output terminal, a second output terminal, a coil body and a projection plane parallel to the coil body, wherein a first projection on the projection plane is formed by the first output terminal, a second projection on the projection plane is formed by the second output terminal, and an overlapping portion is between the first projection and the second projection.

Abstract: The present invention provides a continuous conductive planar coil structure. The continuous conductive planar coil structure includes a first output terminal, a second output terminal, a coil body and a projection plane parallel to the coil body, wherein a first projection on the projection plane is formed by the first output terminal, a second projection on the projection plane is formed by the second output terminal, and an overlapping portion is between the first projection and the second projection.