Patents by Inventor Shan Wong

Shan Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070078027
    Abstract: A manufacturing method of a clubface of a golf club reduces the amount of the metallic material used and enhances production. The manufacturing method includes the following steps: a metal powder and a binder are mixed to form a mixture; the mixture is shaped by a clubface mold to form a primary clubface; the primary clubface is then heated to a sintering temperature of the metal powder to form a clubface, before the clubface is finally compacted to make it stronger and increase the clubface's density.
    Type: Application
    Filed: September 30, 2005
    Publication date: April 5, 2007
    Inventor: Luk-Shan Wong
  • Publication number: 20070072699
    Abstract: A clubface of golf club head and a method for fabricating the same can fabricate the clubface in mass production and will not consume much more valuable metal. The method has the following steps: firstly, a conductive top mould and a conductive bottom mould are provided. Then, titanium powder is placed on the conductive bottom mould and press down the top mould. Following, the conductive top mould and the conductive bottom mould are electrified. The conductive top mould is provided with consistent pressure to contact with the conductive bottom mould, and consistently electrifying the conductive top mould and the conductive bottom mould for a predetermined period. After that, removing electricity, and removing the conductive top mould and taking out the clubface of the golf club head.
    Type: Application
    Filed: September 26, 2005
    Publication date: March 29, 2007
    Inventor: Luk-Shan Wong
  • Publication number: 20070057365
    Abstract: A device for preventing a low-melting point heat-transfer medium from oxidization is proposed. The device has a heat sink, a low-melting-point alloy, and an oxidization-proof layer. The low-melting-point alloy is disposed on the heat sink and serves as a heat-transfer medium to contact a heat source. The oxidization-proof layer is made of a condensable material and disposed on the heat sink. The oxidization-proof layer surrounds the low-melting-point alloy. The oxidization-proof layer can effectively prevent the low-melting-point alloy from invasion by ambient air by isolating the low-melting-point alloy from the ambient air. Hence, the oxidization of the low-melting-point alloy is prevented and the high heat-transfer efficiency of the low-melting-point alloy is kept.
    Type: Application
    Filed: September 13, 2005
    Publication date: March 15, 2007
    Inventor: Luk-Shan Wong
  • Publication number: 20060175951
    Abstract: An electrode of a cold cathode fluorescent and manufacturing method thereof has an integral structure that makes it easy to increase the discharge area of the discharge portion and raise production output. The manufacturing method of the electrode has the followed steps: mixing metal powders and binders to form a mixture; shaping the mixture in an electrode die to form an electrode mold base; heating the electrode mold base until a sintering temperature to form an electrode; and compacting the electrode for increasing its intensity.
    Type: Application
    Filed: February 9, 2005
    Publication date: August 10, 2006
    Inventor: Luk-Shan Wong
  • Publication number: 20060046427
    Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
    Type: Application
    Filed: August 26, 2005
    Publication date: March 2, 2006
    Applicant: APPLIED MATERIALS, INC., A Delaware corporation
    Inventors: Nitin Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won Bang, Yen-Kun Wang
  • Publication number: 20050142895
    Abstract: A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
    Type: Application
    Filed: December 20, 2004
    Publication date: June 30, 2005
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won Bang, Yen-Kun Wang, Zheng Yuan