Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A preparation method for 2,3-pentanedione, including the steps of adding one or both of 3-hydroxy-2-pentanone and 2-hydroxy-3-pentanone into water and conducting mixing, and introducing ozone at the temperature of 3-20° C. for a reaction to obtain 2,3-pentanedione. The synthesis process of the present invention uses ozone for oxidizing a mixture containing 3-hydroxy-2-pentanone and 2-hydroxy-3-pentanone, acetic acid is used as a cocatalyst, reaction conditions are mild, the operation process is simple, the product yield is high, and the cost is low.

Abstract: A preparation method for 2,3-pentanedione, including the steps of adding one or both of 3-hydroxy-2-pentanone and 2-hydroxy-3-pentanone into water and conducting mixing, and introducing ozone at the temperature of 3-20° C. for a reaction to obtain 2,3-pentanedione. The synthesis process of the present invention uses ozone for oxidizing a mixture containing 3-hydroxy-2-pentanone and 2-hydroxy-3-pentanone, acetic acid is used as a cocatalyst, reaction conditions are mild, the operation process is simple, the product yield is high, and the cost is low.

Abstract: A synthesis method of 3,4-hexanedione comprises a step of 4-hydroxy-3-hexanonen oxidation, and in the step of 4-hydroxy-3-hexanonen oxidation, water is used as a catalyst, acetic acid is used as a cocatalyst, and ozone is used as an oxidizing agent to carry out an oxidation reaction on 4-hydroxy-3-hexanonen, and after the reaction, distillation under reduced pressure is carried out to obtain the 3,4-hexanedione. According to the synthesis method of 3,4-hexanedione in the invention, in the process of 4-hydroxy-3-hexanone oxidation, the 4-hydroxy-3-hexanone is placed in the water, the ozone is used for oxidation on the 4-hydroxy-3-hexanone, and the acetic acid is used as the cocatalyst, so that the entire oxidation reaction process is mild in conditions and simple to operate, no sewage is produced when the final product (3,4-hexanedione) is obtained, and the yield is greatly increased.

Abstract: A synthesis method of 3,4-hexanedione comprises a step of 4-hydroxy-3-hexanonen oxidation, and in the step of 4-hydroxy-3-hexanonen oxidation, water is used as a catalyst, acetic acid is used as a cocatalyst, and ozone is used as an oxidizing agent to carry out an oxidation reaction on 4-hydroxy-3-hexanonen, and after the reaction, distillation under reduced pressure is carried out to obtain the 3,4-hexanedione. According to the synthesis method of 3,4-hexanedione in the invention, in the process of 4-hydroxy-3-hexanone oxidation, the 4-hydroxy-3-hexanone is placed in the water, the ozone is used for oxidation on the 4-hydroxy-3-hexanone, and the acetic acid is used as the cocatalyst, so that the entire oxidation reaction process is mild in conditions and simple to operate, no sewage is produced when the final product (3,4-hexanedione) is obtained, and the yield is greatly increased.

Abstract: A radioactive material for inhibiting cancer and a preparation method thereof are disclosed. The radioactive material for inhibiting cancer is M-SOCTA-Z and M is a radioactive nuclide such as 188Re or 99mT while Z is protein or peptides having amino acid with NH or NH2 group. The preparation method of the radioactive material for inhibiting cancer includes steps of: reacting SOCTA with protein or peptide. Ester (—COOR) in SOCTA reacts with amines (—NH, —NH2) in protein or peptide to form peptide bond. Thus SOCTA-protein or SOCTA-peptide complex is produced. Then these SOCTA-protein complex reacts with radioactive nuclide M so as to generate M-SOCTA-protein or M-SOCTA-peptide. In an embodiment of the present invention, monoclonal antibody Herceptin is applied to bind with SOCTA and in combination with radiation-based therapy, effects of cancer treatment (such as breast cancer) are enhanced.