Patents by Inventor Shan ZOU

Shan ZOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SLOPE BRAKE PRESSURE DETERMINING METHOD AND DETERMINING SYSTEM, AND VEHICLE
    Publication number: 20220289153
    Abstract: The invention relates to a slope brake pressure determining method and system.
    Type: Application
    Filed: March 9, 2022
    Publication date: September 15, 2022
    Inventors: Xianhui ZHANG, Bohong XIAO, Shan ZOU, Da YUAN
  • CNT thin film transistor with high K polymeric dielectric
    Patent number: 9620728
    Abstract: A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: April 11, 2017
    Assignee: National Research Council of Canada
    Inventors: Naiying Du, Patrick Malenfant, Zhao Li, Jacques Lefebvre, Girjesh Dubey, Gregory Lopinski, Shan Zou
  • CNT Thin Film Transistor With High K Polymeric Dielectric
    Publication number: 20150214496
    Abstract: A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.
    Type: Application
    Filed: January 30, 2015
    Publication date: July 30, 2015
    Applicant: National Research Council of Canada
    Inventors: Naiying DU, Patrick MALENFANT, Zhao LI, Jacques LEFEBVRE, Girjesh DUBEY, Gregory LOPINSKI, Shan ZOU
  • PAPER GUIDE MECHANISM AND PRINTING DEVICE WITH PAPER GUIDE MECHANISM
    Publication number: 20140291925
    Abstract: A paper guide mechanism includes an installation board and two guide assemblies. Each two guide assemblies slidably is engaged with the installation board and includes a first limiting piece, and the first limiting pieces are parallel to each other. One of the two guide assemblies is slidable relative to the installation board along a first direction, and another one of the two guide assemblies is slidable relative to the installation board along a second direction opposite to the first direction. Thus changing a distance between the first limiting pieces, so that the two guide assemblies can position different sizes of paper.
    Type: Application
    Filed: October 28, 2013
    Publication date: October 2, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: SHAN-SHAN ZOU, XIAO-YONG MA