Abstract: Systems and methods for simultaneous focal length control and achromatic computational imaging with quartic metasurfaces are disclosed herein. In one embodiment, an imaging system includes: a first metalens having a plurality of first nanoposts carried by a first substrate; a second metalens having a plurality of second nanoposts carried by a second substrate; and a source of light configured to emit light toward the first metalens and the second metalens. The first metalens is transversely offset with respect to the second metalens.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

Abstract: A tunable liquid crystal (LC) device includes an LC layer between a pair of reflectors forming an optical cavity. The reflectors include conductive layers for applying an electrical signal to the LC layer. One of the conductive layers may include an array of conductive pixels for spatially selective control of the effective refractive index of the LC layer. The phase delay introduced by the LC layer may be greatly increased or magnified by placing the LC layer into the optical cavity. This enables a substantial reduction of the LC layer thickness, which in its turn enables very tight pitches of the LC pixels, with a reduced inter-pixel crosstalk caused by fringing electric fields, as well as faster switching times. A tight-pitch, fast LC device may be used as a configurable hologram or a spatial light modulator.

Abstract: A tunable liquid crystal (LC) device includes an LC layer between a pair of reflectors forming an optical cavity. The reflectors include conductive layers for applying an electrical signal to the LC layer. One of the conductive layers may include an array of conductive pixels for spatially selective control of the effective refractive index of the LC layer. The phase delay introduced by the LC layer may be greatly increased or magnified by placing the LC layer into the optical cavity. This enables a substantial reduction of the LC layer thickness, which in its turn enables very tight pitches of the LC pixels, with a reduced inter-pixel crosstalk caused by fringing electric fields, as well as faster switching times. A tight-pitch, fast LC device may be used as a configurable hologram or a spatial light modulator.

Abstract: Systems and methods for simultaneous focal length control and achromatic computational imaging with quartic metasurfaces are disclosed herein. In one embodiment, an imaging system includes: a first metalens having a plurality of first nanoposts carried by a first substrate; a second metalens having a plurality of second nanoposts carried by a second substrate; and a source of light configured to emit light toward the first metalens and the second metalens. The first metalens is transversely offset with respect to the second metalens.

Abstract: Metasurfaces and systems including metasurfaces for imaging and methods of imaging are described. Such metasurfaces may be formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active over a wavelength range and in certain embodiments are configured to form lenses. In particular, the metasufaces described herein may be configured to focus light passed through the metasurface in an extended depth of focus. Accordingly, the disclosed metasurfaces are generally suitable for generating color without or with minimal chromatic aberrations, for example, in conjunction with computational reconstruction.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefor embody a new paradigm in metasurface design and manufacturing.