Abstract: Light sensors in an imager having sloped features including, but not limited to, hemispherical, v-shaped, or other sloped shapes. Light sensors having such a sloped feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for absorption there.

Abstract: A high integrity, reliable liner is disclosed for a via in which a titanium aluminide layer is preformed as a lining within a via hole prior to deposition of other conductive materials within the via hole. The conductive materials deposited on the preformed titanium aluminide can be either a secondary barrier layer portion of the liner, such as a titanium compound layer, which in turn has a metal plug deposited thereon, or, alternatively, a metal plug directly deposited on the titanium aluminide layer. An important advantage achieved by the present invention is that a via is formed with a substantial elimination of void formation. The enhanced vias are useful in a wide variety of semiconductor devices, including SRAMS and DRAMs.

Abstract: A high integrity, reliable liner is disclosed for a via in which a titanium aluminide layer is preformed as a lining within a via hole prior to deposition of other conductive materials within the via hole. The conductive materials deposited on the preformed titanium aluminide can be either a secondary barrier layer portion of the liner, such as a titanium compound layer, which in turn has a metal plug deposited thereon, or, alternatively, a metal plug directly deposited on the titanium aluminide layer. An important advantage achieved by the present invention is that a via is formed with a substantial elimination of void formation. The enhanced vias are useful in a wide variety of semiconductor devices, including SRAMS and DRAMs.

Abstract: A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening is provided. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material may be converted to a silicide by an annealing process to form the contact interface.

Abstract: A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening is provided. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material may be converted to a silicide by an annealing process to form the contact interface.

Abstract: A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material is converted to a silicide by an annealing process to form the contact interface.

Abstract: A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material is converted to a silicide by an annealing process to form the contact interface.