Abstract: A method for describing an array of elements includes the steps of providing an array description system that includes a library of possible alternative designations; and describing the array of elements using at least one of the alternative designations. The library of possible alternative designations includes one or more of the following (i) a line designation, (ii) a column designation, (iii) a square designation, (iv) a rectangle designation, (v) a cross designation, (vi) a diagonal designation, (vii) a complex designation, (viii) a mosaic designation, (ix) an overlap designation, (x) a power designation, (xi) a border designation, (xii) a corner flip designation, (xiii) a mirror image designation, (xiv) a repeat designation, and (xv) a glide designation.

Abstract: A method for transferring an actual workpiece pattern (23) to a workpiece (24) using a pixelated phase mask (14) includes (i) evaluating a desired workpiece pattern (226) to identify a desired repetitive step cell (230) in the desired workpiece pattern (226), the desired repetitive step cell (230) having a desired step cell width (250), and a desired step cell length (252); (ii) evaluating if the desired step cell width (250) is equal to a first integer multiplied by a pixel width (28A) and an optical adjustment factor; and (iii) evaluating if the desired step cell length (252) is equal to a second integer multiplied by a pixel length (28B) and an optical adjustment factor.

Abstract: Non-linear metallic thermal resist structure having more than two layers of different metals and effective eutectic temperature that is lower than eutectic temperature of a reference non-linear metallic thermal resist having only two layer of same different metals. Optionally, at least one the layers of such resist structure is doped with material different from host metals and/or deposited under conditions resulting in strain or stress in a layer at hand. Method of multi-exposure-based patterning of a substrate carrying such structure with laser pulses characterized by irradiance at levels equal to or below 10 mJ/cm2. The sequence of steps producing the required pattern on the substrate may be explicitly lacking a step of removal of a portion of the resist structure between two consecutive exposures.

Abstract: Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Abstract: An optical element assembly includes a base, and an element unit. The element unit includes (i) an optical element having an element central axis and an element perimeter; and (ii) an element connector assembly that couples the optical element to the base, the element connector assembly including a flexure assembly having an element flexure and a base flexure. A distal end of the element flexure is coupled to the optical element near the element perimeter, a distal end of the base flexure is coupled to the base, and a proximal end of the element flexure is coupled to a proximal end of the base flexure near the element central axis.

Abstract: Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Abstract: Patterns from a phase array are transferred to a substrate such as a series of overlapping patterns and non-overlapping patterns. The overlapping patterns are associated with phase array pixel offsets so as to overlap at the substrate and the necessary overlap is based on substrate scan speed. Non-overlapping or offset patterns are obtained by varying optical pulse timing as the substrate is scanned, or by including a corresponding offset to pattern definition at the phase array.

Abstract: A method for describing an array of elements includes the steps of providing an array description system that includes a library of possible alternative designations; and describing the array of elements using at least one of the alternative designations. The library of possible alternative designations includes one or more of the following (i) a line designation, (ii) a column designation, (iii) a square designation, (iv) a rectangle designation, (v) a cross designation, (vi) a diagonal designation, (vii) a complex designation, (viii) a mosaic designation, (ix) an overlap designation, (x) a power designation, (xi) a border designation, (xii) a corner flip designation, (xiii) a mirror image designation, (xiv) a repeat designation, and (xv) a glide designation.

Abstract: An optical element assembly includes a base, and an element unit. The element unit includes (i) an optical element having an element central axis and an element perimeter; and (ii) an element connector assembly that couples the optical element to the base, the element connector assembly including a flexure assembly having an element flexure and a base flexure. A distal end of the element flexure is coupled to the optical element near the element perimeter, a distal end of the base flexure is coupled to the base, and a proximal end of the element flexure is coupled to a proximal end of the base flexure near the element central axis.

Abstract: An optical element assembly includes a base, and an element unit. The element unit includes (i) an optical element having an element central axis and an element perimeter; and (ii) an element connector assembly that couples the optical element to the base, the element connector assembly including a flexure assembly having an element flexure and a base flexure. A distal end of the element flexure is coupled to the optical element near the element perimeter, a distal end of the base flexure is coupled to the base, and a proximal end of the element flexure is coupled to a proximal end of the base flexure near the element central axis.

Abstract: Non-linear metallic thermal resist structure having more than two layers of different metals and effective eutectic temperature that is lower than eutectic temperature of a reference non-linear metallic thermal resist having only two layer of same different metals. Optionally, at least one the layers of such resist structure is doped with material different from host metals and/or deposited under conditions resulting in strain or stress in a layer at hand. Method of multi-exposure-based patterning of a substrate carrying such structure with laser pulses characterized by irradiance at levels equal to or below 10 mJ/cm2. The sequence of steps producing the required pattern on the substrate may be explicitly lacking a step of removal of a portion of the resist structure between two consecutive exposures.

Abstract: Non-linear metallic thermal resist structure having more than two layers of different metals and effective eutectic temperature that is lower than eutectic temperature of a reference non-linear metallic thermal resist having only two layer of same different metals. Optionally, at least one the layers of such resist structure is doped with material different from host metals and/or deposited under conditions resulting in strain or stress in a layer at hand. Method of multi-exposure-based patterning of a substrate carrying such structure with laser pulses characterized by irradiance at levels equal to or below 10 mJ/cm2. The sequence of steps producing the required pattern on the substrate may be explicitly lacking a step of removal of a portion of the resist structure between two consecutive exposures.

Abstract: A method for transferring an actual workpiece pattern (23) to a workpiece (24) using a pixelated phase mask (14) includes (i) evaluating a desired workpiece pattern (226) to identify a desired repetitive step cell (230) in the desired workpiece pattern (226), the desired repetitive step cell (230) having a desired step cell width (250), and a desired step cell length (252); (ii) evaluating if the desired step cell width (250) is equal to a first integer multiplied by a pixel width (28A) and an optical adjustment factor; and (iii) evaluating if the desired step cell length (252) is equal to a second integer multiplied by a pixel length (28B) and an optical adjustment factor.

Abstract: Non-linear metallic thermal resist structure having more than two layers of different metals and effective eutectic temperature that is lower than eutectic temperature of a reference non-linear metallic thermal resist having only two layer of same different metals. Optionally, at least one the layers of such resist structure is doped with material different from host metals and/or deposited under conditions resulting in strain or stress in a layer at hand. Method of multi-exposure-based patterning of a substrate carrying such structure with laser pulses characterized by irradiance at levels equal to or below 10 mJ/cm2. The sequence of steps producing the required pattern on the substrate may be explicitly lacking a step of removal of a portion of the resist structure between two consecutive exposures.

Abstract: Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Abstract: Patterns from a phase array are transferred to a substrate such as a series of overlapping patterns and non-overlapping patterns. The overlapping patterns are associated with phase array pixel offsets so as to overlap at the substrate and the necessary overlap is based on substrate scan speed. Non-overlapping or offset patterns are obtained by varying optical pulse timing as the substrate is scanned, or by including a corresponding offset to pattern definition at the phase array.

Abstract: An optical element assembly includes a base, and an element unit. The element unit includes (i) an optical element having an element central axis and an element perimeter; and (ii) an element connector assembly that couples the optical element to the base, the element connector assembly including a flexure assembly having an element flexure and a base flexure. A distal end of the element flexure is coupled to the optical element near the element perimeter, a distal end of the base flexure is coupled to the base, and a proximal end of the element flexure is coupled to a proximal end of the base flexure near the element central axis.

Abstract: A method for describing an array of elements includes the steps of providing an array description system that includes a library of possible alternative designations; and describing the array of elements using at least one of the alternative designations. The library of possible alternative designations includes one or more of the following (i) a line designation, (ii) a column designation, (iii) a square designation, (iv) a rectangle designation, (v) a cross designation, (vi) a diagonal designation, (vii) a complex designation, (viii) a mosaic designation, (ix) an overlap designation, (x) a power designation, (xi) a border designation, (xii) a corner flip designation, (xiii) a mirror image designation, (xiv) a repeat designation, and (xv) a glide designation.

Abstract: An exposure apparatus (10) for transferring a first mask pattern (29A) from a first mask (26A) and a second mask pattern (29B) from a second mask (26B) to a substrate (28) includes a first mask stage assembly (18A), a second mask stage assembly (18B), an illumination system (14A), a substrate stage assembly (20), and an optical assembly (16). The first mask stage assembly (18A) positions the first mask (26A). The second mask stage assembly (18B) positions the second mask (26B). The illumination system (14A) selectively generates a first illumination beam (32A) that is directed at the first mask (26A) to generate a first pattern beam (38A), and a second illumination beam (32B) that is directed at the second mask (26B) to generate a second pattern beam (38B). The substrate stage assembly (20) positions the substrate (28).

Abstract: The present application is directed to methods of forming a phase pattern for an integrated circuit feature described in a design database as having a first target dimension. In one embodiment, the method comprises determining whether forming a phase pattern for the integrated circuit feature described in the design database will result in one or more phase blocks of the same phase type being positioned in relative proximity so as to result in a low contrast condition, selecting a second target dimension that will avoid the low contrast condition if the low contrast condition will result, and forming the phase pattern for an integrated circuit feature having the second target dimension. Systems for forming phase patterns and photomasks comprising the phase patterns of the present application are also disclosed.