Patents by Inventor Shane Tang

Shane Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180138028
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Application
    Filed: December 19, 2017
    Publication date: May 17, 2018
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Patent number: 9875891
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: January 23, 2018
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Publication number: 20170117134
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Application
    Filed: January 5, 2017
    Publication date: April 27, 2017
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Patent number: 9589790
    Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: March 7, 2017
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Dennis M. Hausmann, Shane Tang, James S. Sims
  • Patent number: 9564312
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: February 7, 2017
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Patent number: 9502238
    Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: November 22, 2016
    Assignee: Lam Research Corporation
    Inventors: Michal Danek, Jon Henri, Shane Tang
  • Publication number: 20160293398
    Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.
    Type: Application
    Filed: April 3, 2015
    Publication date: October 6, 2016
    Inventors: Michal Danek, Jon Henri, Shane Tang
  • Publication number: 20160148806
    Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.
    Type: Application
    Filed: November 24, 2014
    Publication date: May 26, 2016
    Inventors: Jon Henri, Dennis M. Hausmann, Shane Tang, James S. Sims
  • Publication number: 20160148800
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Application
    Filed: November 24, 2014
    Publication date: May 26, 2016
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Patent number: 9076646
    Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: July 7, 2015
    Assignee: Lam Research Corporation
    Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang
  • Publication number: 20140113457
    Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.
    Type: Application
    Filed: December 30, 2013
    Publication date: April 24, 2014
    Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang