Patents by Inventor Shane Tang
Shane Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240132391Abstract: A laminate includes a first glass article having a first thickness, a first annealing point (TA1), and a first softening point (TS1), a second glass article having a second thickness, a second annealing point (TA2), and a second softening point (TS2), and an interlayer disposed between the first glass article and the second glass article. The first thickness is greater than the second thickness, the second annealing point (TA2) is less than or equal to the first annealing point (TA1), and the second softening point (TS2) is greater than the first softening point (TS1).Type: ApplicationFiled: December 29, 2023Publication date: April 25, 2024Inventors: Douglas Dale Bressler, Rebecca Marie Connors, Sinue Gomez, Timothy Michael Gross, Shane David Seyler, Jason Scott Stewart, Zhongzhi Tang, Lisa Anne Tietz Moore
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Patent number: 11915918Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.Type: GrantFiled: June 29, 2021Date of Patent: February 27, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Jothilingam Ramalingam, Yong Cao, Ilya Lavitsky, Keith A. Miller, Tza-Jing Gung, Xianmin Tang, Shane Lavan, Randy D. Schmieding, John C. Forster, Kirankumar Neelasandra Savandaiah
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Patent number: 11832533Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: December 20, 2021Date of Patent: November 28, 2023Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20220115592Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: December 20, 2021Publication date: April 14, 2022Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Patent number: 11239420Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: August 24, 2018Date of Patent: February 1, 2022Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20210384028Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.Type: ApplicationFiled: October 11, 2019Publication date: December 9, 2021Inventors: James S. SIMS, Shane TANG, Vikrant RAI, Andrew MCKERROW, Huatan QIU
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Patent number: 10804099Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: GrantFiled: December 19, 2017Date of Patent: October 13, 2020Assignee: Lam Research CorporationInventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Publication number: 20200066987Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: August 24, 2018Publication date: February 27, 2020Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20180138028Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: ApplicationFiled: December 19, 2017Publication date: May 17, 2018Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Patent number: 9875891Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: GrantFiled: January 5, 2017Date of Patent: January 23, 2018Assignee: Lam Research CorporationInventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Publication number: 20170117134Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: ApplicationFiled: January 5, 2017Publication date: April 27, 2017Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Patent number: 9589790Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.Type: GrantFiled: November 24, 2014Date of Patent: March 7, 2017Assignee: Lam Research CorporationInventors: Jon Henri, Dennis M. Hausmann, Shane Tang, James S. Sims
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Patent number: 9564312Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: GrantFiled: November 24, 2014Date of Patent: February 7, 2017Assignee: Lam Research CorporationInventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Patent number: 9502238Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.Type: GrantFiled: April 3, 2015Date of Patent: November 22, 2016Assignee: Lam Research CorporationInventors: Michal Danek, Jon Henri, Shane Tang
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Publication number: 20160293398Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.Type: ApplicationFiled: April 3, 2015Publication date: October 6, 2016Inventors: Michal Danek, Jon Henri, Shane Tang
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Publication number: 20160148800Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: ApplicationFiled: November 24, 2014Publication date: May 26, 2016Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Publication number: 20160148806Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.Type: ApplicationFiled: November 24, 2014Publication date: May 26, 2016Inventors: Jon Henri, Dennis M. Hausmann, Shane Tang, James S. Sims
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Patent number: 9076646Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.Type: GrantFiled: December 30, 2013Date of Patent: July 7, 2015Assignee: Lam Research CorporationInventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang
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Publication number: 20140113457Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.Type: ApplicationFiled: December 30, 2013Publication date: April 24, 2014Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang