Abstract: In the optical gas sensor of the application, a three-dimensional reaction chamber structure is used to replace the traditional simple structure, so that the performance of the gas sensor can be enhanced in a wafer-level size. Besides, a light source, a reaction chamber and a light detector are integrated into one wafer in an exemplary embodiment, so as to achieve the wafer-level integration. In addition, the optical gas sensor can detect various gases simultaneously and has wide application in fields such as home environment monitoring, industrial safety, and disease diagnosis and treatment.

Abstract: A gas sensor manufacturing method comprises the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and at least one conducting line; coating or imprinted a sensing material on the integrated circuit region; and etching the carrier and the oxide layer to form a cavity up to the gap so as to form a film structure which is suspended in the cavity by the cantilevered connecting arm.

Abstract: In the optical gas sensor of the application, a three-dimensional reaction chamber structure is used to replace the traditional simple structure, so that the performance of the gas sensor can be enhanced in a wafer-level size. Besides, a light source, a reaction chamber and a light detector are integrated into one wafer in an exemplary embodiment, so as to achieve the wafer-level integration. In addition, the optical gas sensor can detect various gases simultaneously and has wide application in fields such as home environment monitoring, industrial safety, and disease diagnosis and treatment.

Abstract: A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.

Abstract: A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.

Abstract: A bi-directional continuous peristaltic micro-pump is described. The micro-pump comprises: a substrate, an actuating mechanism and a fluid channel. The actuating mechanism comprises: a first slanted membrane the thickness of which increases progressively from left to right, a first chamber formed between the first slanted membrane and the substrate; and a second slanted membrane, the thickness of which decreases progressively from left to right, the second slanted membrane being located to the first slanted membrane's right side and parallel to the first slanted membrane with a space between the two membranes, a second chamber formed between the second slanted membrane and the substrate. By inflating the first chamber and the second chamber, the first slanted membrane and the second slanted membrane generate a continuous sweeping motion to force the working fluid to flow.

Abstract: A bidirectional continuous peristaltic micro-pump is described. The micro-pump comprises: a substrate, an actuating mechanism and a fluid channel. The actuating mechanism comprises: a first slanted membrane the thickness of which increases progressively from left to right, a first chamber formed between the first slanted membrane and the substrate; and a second slanted membrane, the thickness of which decreases progressively from left to right, the second slanted membrane being located to the first slanted membrane's right side and parallel to the first slanted membrane with a space between the two membranes, a second chamber formed between the second slanted membrane and the substrate. By inflating the first chamber and the second chamber, the first slanted membrane and the second slanted membrane generate a continuous sweeping motion to force the working fluid to flow.