Patents by Inventor Shang-Fu Chen

Shang-Fu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic system and touch sensitive processing apparatus for touch function setting and activating and method thereof
    Patent number: 11921947
    Abstract: A touch function setting method is provided. The method comprising: receiving a sequence parameter which includes multiple clicks, each of the clicks is corresponding to one of areas of a touch panel or screen; receiving a function parameter corresponding to the sequence parameter, the function parameter is corresponding to activate a function; and storing a group of touch function parameters, which includes the sequence parameter and the function parameter.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: March 5, 2024
    Assignee: EGALAX_EMPIA TECHNOLOGY INC.
    Inventors: Chin-Fu Chang, Shang-Tai Yeh, Chia-Ling Sun, Jia-Ming Chen
  • Solar cell with superlattice structure and fabricating method thereof
    Patent number: 8143513
    Abstract: A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: March 27, 2012
    Assignees: Industrial Technology Research Institute, Atomic Energy Council—Institute of Nuclear Energy Research
    Inventors: Chih-Hung Chiou, Pei-Hsuan Wu, Shang-Fu Chen, I-Liang Chen, Jung-Tsung Hsu, Andrew-Yen C. Tzeng, Chih-Hung Wu
  • Solar cell with superlattice structure and fabricating method thereof
    Publication number: 20070151595
    Abstract: A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.
    Type: Application
    Filed: June 28, 2006
    Publication date: July 5, 2007
    Inventors: Chih-Hung Chiou, Pei-Hsuan Wu, Shang-Fu Chen, I-Liang Chen, Jung-Tsung Hsu, Andrew-Yen Tzeng, Chih-Hung Wu