Patents by Inventor Shang-Kun HUANG

Shang-Kun HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor packages
    Patent number: 10872861
    Abstract: A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: December 22, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC. KAOHSIUNG, TAIWAN
    Inventors: Yong-Da Chiu, Shiu-Chih Wang, Shang-Kun Huang, Ying-Ta Chiu, Shin-Luh Tarng, Chih-Pin Hung
  • SEMICONDUCTOR PACKAGES
    Publication number: 20190244909
    Abstract: A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.
    Type: Application
    Filed: February 7, 2018
    Publication date: August 8, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Yong-Da CHIU, Shiu-Chih WANG, Shang-Kun HUANG, Ying-Ta CHIU, Shin-Luh TARNG, Chih-Pin HUNG
  • Semiconductor device and method for manufacturing the same
    Patent number: 10096569
    Abstract: The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: October 9, 2018
    Assignees: ADVANCED SEMICONDUCTOR ENGINEERING, INC., NATIONAL CHUNG HSING UNIVERSITY
    Inventors: Ying-Ta Chiu, Shang-Kun Huang, Yong-Da Chiu, Jenn-Ming Song
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20180247913
    Abstract: The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.
    Type: Application
    Filed: February 27, 2017
    Publication date: August 30, 2018
    Applicants: ADVANCED SEMICONDUCTOR ENGINEERING, INC., NATIONAL CHUNG HSING UNIVERSITY
    Inventors: Ying-Ta CHIU, Shang-Kun HUANG, Yong-Da CHIU, Jenn-Ming SONG