Abstract: This invention discloses a MOSFET power device supported on a substrate. The MOSFET power device includes a plurality metal-polysilicon gate segments disposed over a gate oxide layer and a plurality of source/drain metal segments each disposed over a corresponding drain or source region in the substrate. The MOSFET power device further includes a plurality of insulating oxide blocks each disposed between a corresponding gap between the source/drain metal segment and the metal-polysilicon gate segment Each of the metal-polysilicon gate segments includes a metal layer disposed above a polysilicon layer wherein a thickness TM of the metal layer is greater than or equal to half of the width WG of the metal-polysilicon gate, i.e., TM≧0.5(WG). And, each of the insulating oxide blocks having a thickness TO greater than or equal to half of the width of the oxide block WO, i.e., TO≧0.5(WO).

Abstract: The present invention discloses a method for fabricating a MOSFET device supported on a substrate.

Abstract: A light source with appropriate optics focusses light on the wafer surface during deposition, while a nearby collector is biased to collect photoemitted electrons from the growing surface. A pico ammeter can be used to convert the small oscillatory current detected to a substantial voltage signal which can be recorded or processed by computer or other sutiable device. The light must contain wavelengths at energies close to or greater than the energy of the photoemission threshold. The detected photoemitted electron signal has an oscillatory component occurring due to the growth of epitaxial layers. This oscillation has frequency 1/.tau., where .tau. is the monolayer accumulation time.