Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.

Abstract: A semiconductor structure includes a substrate, a fin-shaped structure protruding from the substrate and orienting lengthwise along a first direction, an isolation feature disposed over the substrate and along a sidewall of a bottom portion of the fin-shaped structure, and a metal gate structure disposed over the fin-shaped structure and the isolation feature and orienting lengthwise along a second direction perpendicular to the first direction. The metal gate structure includes a bottom portion sandwiched between the isolation feature and the bottom portion of the fin-shaped structure along the second direction.

Abstract: A gripper structure is disclosed and includes a screw-rod main body, a first rotatory nut, a second rotatory nut, a first driving module, a second driving module, a first clamping element and a second clamping element. The first rotatory nut and the second rotatory nut are disposed on two sides of the screw-rod main extended along a first direction body, respectively, and bilaterally symmetrical to each other. The first driving module and the second driving module are configured to drive the first rotatory nut and the second rotatory nut to rotate, respectively. The first rotatory nut and the second rotatory nut are allowed to pass through a midline of the screw-rod main body. When the first driving module drives the first rotatory nut or/and the second driving module drives the second rotatory nut, the first clamping element and the second clamping element are relatively displaced in the first direction to achieve a clamping operation.

Abstract: A motor drive system includes an electric motor, a drive circuit and a control unit. The drive circuit provides a driving current to the electric motor. A current command generator of the control unit generates a current command according to a torque command and a motor operating information. The driving current is converted into a d-axis current and/or a q-axis current by the control unit. Consequently, the driving current is close to the d-axis current command and/or the q-axis current command corresponding to the current command. If a value of the torque command is positive, the current command generator generates the corresponding current command according to a MTPA lookup table. If the value of the torque command is negative, the current command generator generates the corresponding current command according to a zero recycle lookup table.

Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Abstract: A bridge converter converts an input voltage into an output voltage, and includes a switching circuit, a transformer, a rectifying circuit, and a control module. The switching circuit includes a first switch and a second switch. The control module sets a first time period and a second time period. The control module provides a first control signal and a second control signal to control the switching circuit based on the output voltage. The control module fixes an operation frequency of the first control signal and the second control signal at the maximum frequency based on that the control module is set in a standby mode, and provides the first control signal and the second control signal in the first time period, and shields the first control signal and the second control signal in the second time period.

Abstract: A method of forming a semiconductor structure includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, forming cladding layers along sidewalls of the fin structure, forming a dummy gate stack over the cladding layers, and forming source/drain (S/D) features in the fin structure and adjacent to the dummy gate stack. The method further includes removing the dummy gate stack to form a gate trench adjacent to the S/D features, removing the cladding layers to form first openings along the sidewalls of the fin structure, where the first openings extend to below the stack, removing the first semiconductor layers to form second openings between the second semiconductor layers and adjacent to the first openings, and subsequently forming a metal gate stack in the gate trench, the first openings, and the second openings.

Abstract: An integrated circuit includes a first power rail extending in a first direction, and configured to supply a first supply voltage, and a first region next to the first power rail. The first region includes a first conductive structure extending in the first direction, a first set of conductive structures extending in a second direction, and a first set of vias between the first set of conductive structures and the first conductive structure. The first set of conductive structures overlaps the first conductive structure and the first power rail, and is located on a second level. Each conductive structure of the first set of conductive structures is separated from each other in the first direction. Each via of the first set of vias is located where the first set of conductive structures overlaps the first conductive structure and couples the first set of conductive structures to the first conductive structure.

Abstract: An electric gripper is disclosed and includes a carrier, an actuator, two dual-lever assemblies and an angle sensor. The actuator is disposed on the carrier and includes a sliding portion. The two dual-lever assemblies are disposed on the carrier and located at two opposite lateral sides of the sliding portion. Each of the two dual-lever assemblies includes a driving lever, a limiting lever and a gripping piece. The driving levers are staggered to each other. The limiting levers are staggered to each other. When the sliding portion slides a first distance in the first direction, the sliding portion drives the driving levers to rotate an angle, and the gripping pieces move toward each other to displace a second distance in a second direction. The angle sensor is disposed on the carrier and configured to measure the angle, to correspond to the first distance and the second distance.