Patents by Inventor Shang-Yi Yang

Shang-Yi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10509755
    Abstract: An automatic switching apparatus and an automatic switching method are disclosed. The automatic switching apparatus includes a universal serial bus Type-C input connector, a plurality of main links, at least one video output connector and at least one USB output connector. The automatic switching method includes the steps of: (a) detecting a use state of the plurality of main links; and (b) automatically switching the specification of the at least one USB output connector.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: December 17, 2019
    Assignee: ATEN International Co., Ltd.
    Inventors: Shang-Yi Yang, Sin-Hong Chen, Tze-an Shen
  • Publication number: 20180239732
    Abstract: An automatic switching apparatus and an automatic switching method are disclosed. The automatic switching apparatus includes a universal serial bus Type-C input connector, a plurality of main links, at least one video output connector and at least one USB output connector. The automatic switching method includes the steps of: (a) detecting a use state of the plurality of main links; and (b) automatically switching the specification of the at least one USB output connector.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 23, 2018
    Applicant: ATEN International Co., Ltd.
    Inventors: Shang-Yi Yang, Sin-Hong Chen, Tze-an Shen
  • Patent number: 10044970
    Abstract: An image processing apparatus is disclosed. The splitter duplicates an original image signal into a first image signal and a second image signal. The first signal converter converts the second image signal having a first image format to the second image signal having a second image format. The image processor stores the second image signal in the memory according to an enable signal and continuously compares whether the current frame of the second image signal is the same as the previous frame of the second image signal. If they are different, the image processor continuously receives the second image signal and stores it in the memory. If they are the same, the image processor stops receiving the second image signal. The second converter converts the second image signal having the second image format to the second image signal having the first image format.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: August 7, 2018
    Assignee: ATEN INTERNATIONAL CO., LTD.
    Inventors: Shang-Yi Yang, Jian-Liang Che, Ming-Chen Hsu
  • Publication number: 20170171493
    Abstract: An image processing apparatus is disclosed. The splitter duplicates an original image signal into a first image signal and a second image signal. The first signal converter converts the second image signal having a first image format to the second image signal having a second image format. The image processor stores the second image signal in the memory according to an enable signal and continuously compares whether the current frame of the second image signal is the same as the previous frame of the second image signal. If they are different, the image processor continuously receives the second image signal and stores it in the memory. If they are the same, the image processor stops receiving the second image signal. The second converter converts the second image signal having the second image format to the second image signal having the first image format.
    Type: Application
    Filed: December 9, 2016
    Publication date: June 15, 2017
    Applicant: ATEN International Co., Ltd.
    Inventors: Shang-Yi Yang, Jian-Liang Che, Ming-Chen Hsu
  • Patent number: 9530696
    Abstract: A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: December 27, 2016
    Assignee: United Microelectronics Corp.
    Inventors: Wei-Hsin Liu, Fu-Yu Tsai, Bin-Siang Tsai, Wei-Lun Hsu, Shang-Yi Yang, Pi-Hsuan Lai