Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.

Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.