Patents by Inventor Shankar Athanikar

Shankar Athanikar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12067233
    Abstract: The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.
    Type: Grant
    Filed: September 21, 2022
    Date of Patent: August 20, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shankar Athanikar, Akhilesh Kumar Jaiswal, Puneet Kukreja, Sumeet Paul, Vinay Kumar M N
  • Publication number: 20240020000
    Abstract: The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.
    Type: Application
    Filed: September 21, 2022
    Publication date: January 18, 2024
    Inventors: Shankar Athanikar, Akhilesh Kumar Jaiswal, Puneet Kukreja, Sumeet Paul, Vinay Kumar M N