Abstract: A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a substrate having a nitride layer in a reaction chamber and providing a silicon source, an oxygen source and a boron source into the reaction chamber while delaying providing a phosphorous source into the reaction chamber to form a borosilicate glass layer over the nitride layer. The method continues by providing the silicon, oxygen, boron and phosphorous sources into the reaction chamber to form a borophosphosilicate film over the borosilicate glass layer.

Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.

Abstract: A method and apparatus for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract: A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract: A method including in a wafer processing environment, introducing a liquid via a carrier gas, and separate from the liquid, introducing a first gas comprising ozone and a legacy amount of oxygen and a second gas comprising an effective amount of oxygen to modify a process operation. A system including a chamber, a liquid source, a first gas source, and a second gas source, a controller configured to control the introduction into the chamber of a liquid from the liquid source, a first gas comprising ozone and a legacy amount of oxygen from the first source, a second gas comprising oxygen from the second gas source, and a memory coupled to the controller comprising a machine-readable medium having a program embodied therein for controlling the second gas to introduce an effective amount of oxygen into the chamber to modify a process operation.

Abstract: A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.

Abstract: A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a substrate having a nitride layer in a reaction chamber and providing a silicon source, an oxygen source and a boron source into the reaction chamber while delaying providing a phosphorous source into the reaction chamber to form a borosilicate glass layer over the nitride layer. The method continues by providing the silicon, oxygen, boron and phosphorous sources into the reaction chamber to form a borophosphosilicate film over the borosilicate glass layer.

Abstract: A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.

Abstract: A method for forming a BPSG film from a two-step deposition process and related apparatus and devices. A conformal layer of BPSG is deposited on a substrate. A more stable layer of BPSG is deposited at a higher deposition rate over the conformal layer. The method is suitable for filling trenches at least as narrow as 0.06 microns with aspect ratios of at least 5.5:1.

Abstract: The present invention provides a method and apparatus for detecting the end point of a process by monitoring the position of a valve during the process. In one aspect, a cleaning process is performed in the chamber, and a controller monitors the valve position to determine the end point of the process which corresponds to a decrease in the number of steps in the valve position required to achieve a stable throttle valve position after the cleaning process is complete.