Abstract: The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen.

Abstract: There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO2) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.