Patents by Inventor Shannon C. Riha

Shannon C. Riha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9856563
    Abstract: The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: January 2, 2018
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Alex B. F. Martinson, Joseph A. Libera, Jeffrey W. Elam, Shannon C. Riha
  • Patent number: 8741386
    Abstract: Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: June 3, 2014
    Assignee: Uchicago Argonne, LLC
    Inventors: Elijah J. Thimsen, Shannon C. Riha, Alex B. F. Martinson, Jeffrey W. Elam, Michael J. Pellin
  • Publication number: 20140093645
    Abstract: Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Inventors: Elijah J. THIMSEN, Shannon C. RIHA, Alex B.F. MARTINSON, Jeffrey W. ELAM, Michael J. PELLIN
  • Publication number: 20140053779
    Abstract: The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
    Type: Application
    Filed: August 22, 2012
    Publication date: February 27, 2014
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Alex B. F. Martinson, Joseph A. Libera, Jeffrey W. Elam, Shannon C. Riha