Patents by Inventor Shannon D. Buzard

Shannon D. Buzard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR APPLYING A FINAL METAL LAYER FOR WAFER LEVEL PACKAGING AND ASSOCIATED DEVICE
    Publication number: 20150270223
    Abstract: A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substitute having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt, cobalt alloys, palladium, and palladium alloys.
    Type: Application
    Filed: December 19, 2014
    Publication date: September 24, 2015
    Inventors: Guy F. Burgess, Anthony P. Curtis, Douglas M. Scott, Shannon D. Buzard
  • Method for applying a final metal layer for wafer level packaging and associated device
    Patent number: 8980743
    Abstract: A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substrate having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt. cobalt alloys, palladium, and palladium alloys.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: March 17, 2015
    Assignee: FlipChip International LLC
    Inventors: Guy F. Burgess, Shannon D. Buzard, Anthony P. Curtis, Douglas M. Scott
  • METHOD FOR APPLYING A FINAL METAL LAYER FOR WAFER LEVEL PACKAGING AND ASSOCIATED DEVICE
    Publication number: 20130328203
    Abstract: A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substrate having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt or cobalt alloys, tungsten or tungsten alloys and palladium or palladium alloys.
    Type: Application
    Filed: March 7, 2013
    Publication date: December 12, 2013
    Applicant: FlipChip International, LLC
    Inventors: Guy F. Burgess, Shannon D. Buzard, Anthony P. Curtis, Douglas M. Scott