Abstract: A method for manufacturing back contact solar cells, comprising steps of: (a) providing a silicon substrate doped with phosphorus; (b) doping the front surface and the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a front side p+ region on the front surface and a rear side p+ region on the rear surface; (c) forming a silicon dioxide layer on the front surface and the rear surface; (d) depositing a phosphorus-containing doping paste on the silicon dioxide layer of the rear surface in a second pattern; (e) heating the silicon substrate in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming a rear side n+ region on the rear surface of the silicon substrate beneath the phosphorus-containing doping paste; and (f) removing the silicon dioxide layer from the silicon substrate.

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.

Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.