Patents by Inventor Shannon Riha

Shannon Riha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NO GRAIN BOUNDARY CRYSTAL Cu2S THIN FILMS FOR SOLAR ENERGY CONVERSION
    Publication number: 20180204972
    Abstract: The present invention comprises thin film Cu2S with ultra-large grains or in the best case no grain boundaries (a single crystal thin film). Based on our recent successes in atomic layer epitaxy of other materials we sought and found a suitable substrate (namely GaAs) that induces what appear to be Cu2S single crystal thin films.
    Type: Application
    Filed: January 4, 2018
    Publication date: July 19, 2018
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Alex B. Martinson, Shannon Riha
  • Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
    Patent number: 9388499
    Abstract: A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (?-Fe2O3) which is deposited at low temperatures to provide 99% phase pure ?-Fe2O3 thin films on indium tin oxide. Subsequent annealing produces pure ?-Fe2O3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: July 12, 2016
    Assignee: UChicago Argonne, LLC
    Inventors: Alex B. Martinson, Shannon Riha, Peijun Guo, Jonathan D. Emery
  • ATOMIC LAYER EPITAXY OF HEMATITE ON INDIUM TIN OXIDE FOR APPLICATION IN SOLAR ENERGY CONVERSION
    Publication number: 20150345036
    Abstract: A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (?-Fe2O3) which is deposited at low temperatures to provide 99% phase pure ?-Fe2O3 thin films on indium tin oxide. Subsequent annealing produces pure ?-Fe2O3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
    Type: Application
    Filed: May 28, 2014
    Publication date: December 3, 2015
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Alex B. Martinson, Shannon Riha, Peijun Guo, Jonathan D. Emery