Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-nitrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-carbon-and-nitrogen-containing material on the substrate. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a dielectric constant of less than or about 4.0. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a leakage current at 2 MV/cm of less than or about 3E-08 A/cm2.

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-oxygen-and-carbon-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a dielectric constant of less than or about 4.5. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a density of greater than or about 2.0 g/cm3.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors, wherein the plasma effluents are formed at a plasma power of less than or about 2,000 W. The methods may include depositing a layer of silicon-containing material on the substrate.

Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

Abstract: Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

Abstract: Presented herein are gas permeable, ultrathin, stretchable epidermal electronic devices and related methods enabled by self-assembled porous substrates and conductive nanostructures. Efficient and scalable breath figure method is employed to introduce the porous skeleton and then silver nanowires (AgNWs) are dip-coated and heat-pressed to offer electric conductivity. The resulting film has a transmittance of 61%, sheet resistance of 7.3 ?/sq, and water vapor permeability of 23 mg cm?2 h?1. With AgNWs embedded below the surface of the polymer, the electrode exhibits excellent stability with the presence of sweat and after long-term wear. The present subject matter demonstrates the potential of the electrode for wearable applications—skin-mountable biopotential sensing for healthcare and textile-integrated touch sensing for human-machine interfaces. The electrode can form conformal contact with human skin, leading to low skin-electrode impedance and high-quality biopotential signals.

Abstract: Methods of synthesizing few-layer two-dimensional (2D) Sb2S3 nanosheets using scalable chemical exfoliation are provided. The 2D Sb2S3 nanosheets can be developed as bi-functional anode materials in both lithium ion batteries and sodium ion batteries. The unique structural and functional features brought by 2D Sb2S3 nanosheets can offer short electron/ion diffusion paths and abundant active sites for surface redox reactions.

Abstract: Multi-functional electronic textiles employing nanocomposite pattern elements and related methods are provided. An exemplary method for producing a textile product with an integrated electrical device includes applying conductive nanowires to a substrate to form a conductive nanowire network on the substrate and applying a thermoplastic elastomer to the nanowire network to form a nanocomposite layer on top of the substrate. The method also includes cutting the nanocomposite layer into a desired pattern to form an electrical device and transferring the electrical device from the substrate onto a textile fabric.

Abstract: Disclosed are various embodiments for a flexible hydration sensor that can be implemented in a wearable device. A hydration monitoring device can include at least one flexible electrode comprising a plurality of silver nanowires embedded within a polydimethylsiloxane (PDMS) substrate. Processing circuitry can be configured to measure a hydration level of an individual wearing the hydration monitoring device based at least in part on a measurement of a skin impedance of the individual. In some embodiments, the hydration monitoring device can also generate a hydration metric based on the level of hydration and display the hydration metric.

Abstract: Methods of synthesizing few-layer two-dimensional (2D) Sb2S3 nanosheets using scalable chemical exfoliation are provided. The 2D Sb2S3 nanosheets can be developed as bi-functional anode materials in both lithium ion batteries and sodium ion batteries. The unique structural and functional features brought by 2D Sb2S3 nanosheets can offer short electron/ion diffusion paths and abundant active sites for surface redox reactions.

Abstract: A method of modeling hydrocarbon flow from a fractured unconventional reservoir, where the formation has variability in stimulated reservoir properties caused by multi-stage fracturing treatment. A map is created which divides the formation into a plurality of closed production regions, each of which in turn is divided into a plurality of flow sub-systems extending between fractures in the formation. Production behavior is then calculated for each flow sub-system based on the geography and characteristics of the individual flow sub-system. Region hydrocarbon flow for each closed production region is determined by coupling the calculated production behavior of the flow sub-systems and the reservoir hydrocarbon flow can be modeled by aggregating the region hydrocarbon flows. Type curves showing the modeled hydrocarbon flow at selected points in time can then be plotted.

Abstract: Disclosed are various embodiments for electrodes and sensors having nanowires. According to an embodiment as described, a dry sensor is provided. Nanowires, such as silver nanowires, are positioned within a polymer material, such as polydimethylsiloxane (PDMS) to form an electrode. A conductive element is attached to the electrode during its formation. Example conductive elements include, but are not limited to, a contact or a wire that may be communicatively coupled to medical equipment.

Abstract: A method of modeling hydrocarbon flow from a fractured unconventional reservoir, where the formation has variability in stimulated reservoir properties caused by multi-stage fracturing treatment. A map is created which divides the formation into a plurality of closed production regions, each of which in turn is divided into a plurality of flow sub-systems extending between fractures in the formation. Production behaviour is then calculated for each flow sub-system based on the geography and characteristics of the individual flow sub-system. Region hydrocarbon flow for each closed production region is determined by coupling the calculated production behaviour of the flow sub-systems and the reservoir hydrocarbon flow can be modeled by aggregating the region hydrocarbon flows. Type curves showing the modeled hydrocarbon flow at selected points in time can then be plotted.

Abstract: Disclosed are various embodiments for a flexible hydration sensor that can be implemented in a wearable device. A hydration monitoring device can include at least one flexible electrode comprising a plurality of silver nanowires embedded within a polydimethylsiloxane (PDMS) substrate. Processing circuitry can be configured to measure a hydration level of an individual wearing the hydration monitoring device based at least in part on a measurement of a skin impedance of the individual. In some embodiments, the hydration monitoring device can also generate a hydration metric based on the level of hydration and display the hydration metric.