Abstract: The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus may include a chamber having an inner space, an electrode configured to generate plasma in the inner space, and a power supply unit configured to apply an RF voltage to the electrode, in which the power supply unit may include a first power supply configured to apply a first pulse voltage having a first frequency to the electrode, a second power supply configured to apply a second pulse voltage having a second frequency different from the first frequency to the electrode, a third power supply configured to apply an RF voltage having a third frequency different from the first frequency and the second frequency, and a phase control member for controlling at least one of the phases of the first pulse voltage and the second pulse voltage.

Abstract: A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus may include a chamber having a space for treating the substrate therein; a support unit supporting the substrate in the chamber; a gas supply unit supplying gas into the chamber; and a plasma generation unit exciting the gas in the chamber into a plasma state, wherein the plasma generation unit may include high frequency power supply; a first antenna; a second antenna; and a matcher connected between the high frequency power supply and the first and second antennas, wherein the matcher may include a current distributor distributing a current to the first antenna and the second antenna, and the current distributor includes a first capacitor disposed between the first antenna and the second antenna; a second capacitor connected with the second antenna in series; and a third capacitor connected with the second antenna in parallel, wherein the first capacitor and the second capacitor may be provided as variable capacitors.

Abstract: A substrate treating apparatus includes a processing chamber having an inner processing space, a support unit supporting a substrate in the processing space, a gas supply unit supplying processing gas into the treatment space, and a RF power for supplying an RF signal to excite the processing gas into a plasma state. The support unit includes an edge ring surrounding the substrate, a coupling ring disposed under the edge ring and including an electrode therein, and a cable connected to the electrode. The end of the cable is grounded.

Abstract: A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.

Abstract: The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.