Abstract: In one embodiment, an apparatus comprises a memory comprising a group of memory cells coupled to a wordline; and a controller configured to skip programming of one or more pages of the group of memory cells responsive to a sequential write operation; and program the one or more pages of the group of memory cells responsive to one or more random write commands.

Abstract: For a nonvolatile (NV) storage media such as NAND media that is written by a program and program verify operation, the system can determine an expected number of SSPC (selective slow programming convergence) cells for a page of cells for specific conditions of the page. The system can perform program verify with a first wordline (WL) select voltage for SSPC cell detection for a first write of the page to detect the expected number of SSPC cells. Based on the determined expected number of SSPC cells, the system can set a boost voltage to capture an expected number of SSPC cells during the program verify operation. The system performs program verify for subsequent writes to the page with a higher WL select voltage, to perform program verify for standard cells and then SSPC program verify with the boost voltage determined from the first write.

Abstract: A method, a memory chip controller of a flash memory device, and a flash memory device. The memory chip controller includes processing circuitry to receive data for a first page of N pages of data; and program cells of a memory location of the device to an nth threshold voltage level Ln, Ln corresponding to a program verify voltage level PVn, n being an integer from 0 to 2N?1, and Ln being one of 2N threshold voltage levels achievable using the N pages of data. Programming the cells includes: programming the cells based on the data for the first page while receiving data for subsequent pages of the N pages; and programming the cells based on the data for the subsequent pages, wherein programming the cells includes, for at least n=1, causing a respective dynamic start voltage (DSV) to be applied to the cells based on each respective page number p of the N pages for which data is received at the memory chip controller for the memory location to achieve PV1.

Abstract: Skip program verify for dynamic start voltage (DSV) sampling reduces latency of a program operation on multi-level cell (MLC) memory having at least two pages and programmable with multiple threshold voltage levels, such as a Triple Level Cell (TLC) NAND device. The NAND device skips program verifies corresponding to higher levels of voltage thresholds during DSV sampling. As a result, the NAND device can reduce a total program time (tPROG) to program the MLC memory, and determine the dynamic start program voltage more quickly. The NAND device can improve an effective TLC NAND tPROG by as much as 2% without impacting the placement of the first sub-block being programmed. The skipped program verifies corresponding to the higher levels of voltage thresholds are resumed as soon as DSV sampling is complete.

Abstract: An apparatus is described. The apparatus includes a memory chip having logic circuitry to suspend application of an erasure voltage, wherein, respective responses of the erasure voltage to a decision to suspend the application of the erasure voltage depend on where the erasure voltage is along its waveform.

Abstract: An apparatus is described. The apparatus includes a memory chip having logic circuitry to suspend application of an erasure voltage, wherein, respective responses of the erasure voltage to a decision to suspend the application of the erasure voltage depend on where the erasure voltage is along its waveform.

Abstract: Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.

Abstract: In one embodiment, an apparatus comprises a memory comprising a group of memory cells coupled to a wordline; and a controller configured to skip programming of one or more pages of the group of memory cells responsive to a sequential write operation; and program the one or more pages of the group of memory cells responsive to one or more random write commands.

Abstract: A method, a memory chip controller of a flash memory device, and a flash memory device. The memory chip controller includes processing circuitry to receive data for a first page of N pages of data; and program cells of a memory location of the device to an nth threshold voltage level Ln, Ln corresponding to a program verify voltage level PVn, n being an integer from 0 to 2N?1, and Ln being one of 2N threshold voltage levels achievable using the N pages of data. Programming the cells includes: programming the cells based on the data for the first page while receiving data for subsequent pages of the N pages; and programming the cells based on the data for the subsequent pages, wherein programming the cells includes, for at least n=1, causing a respective dynamic start voltage (DSV) to be applied to the cells based on each respective page number p of the N pages for which data is received at the memory chip controller for the memory location to achieve PV1.

Abstract: Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.

Abstract: Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.

Abstract: Provided are an apparatus, memory device, and method for using variable voltages to discharge electrons from a memory array during verify recovery operations. In response to verifying voltages in memory cells of the non-volatile memory array programmed during a programming pulse applying charges to the storage cells, a memory controller concurrently applies voltages on wordlines of the non-volatile memory array to clear the non-volatile memory array of electrons and applies voltages to the bitlines to perform bitline stabilization.

Abstract: In one aspect of programmed state verification in accordance with the present description, the voltage levels on bitlines of non-target storage cells are each boosted by applying a non-zero offset or delta value, ?V, to the bitlines of non-target storage cells during a precharge subinterval. A bitline verification voltage applied to a bitline of a target storage cell causes the voltage of the bitline to ramp up from the boosted ?V value. As a result, starting from an initial value which is the higher or boosted ?V value, the bitline voltage ramps up more quickly during the precharge subinterval to the bitline verification voltage level to improve system performance. In addition, the bitline verification voltage applied to bitlines of target storage cells during the precharge subinterval, can be at a relatively high value to maintain the accuracy of program state verification.

Abstract: An apparatus is described. The apparatus includes a storage device controller having logic circuitry to apply a program voltage verification process for a first threshold level to a group of non volatile memory cells and correlate first program voltages for the group of non volatile memory cells determined from the process to a second threshold level to determine second program voltages for the second threshold level for the group of non volatile memory cells. The second threshold level is higher than the first threshold level.

Abstract: In one embodiment, an apparatus comprises a memory comprising a first group of memory cells, a second group of memory cells, and a controller to program one or more lower pages of data to the first group of memory cells; store dynamic start voltage information, the dynamic start voltage information indicative of a rate of programming of at least a portion of the first group of memory cells; determine a start program voltage based on the dynamic start voltage information; and apply the start program voltage to the second group of memory cells during a first program pass of a program operation, the program operation to program one or more lower pages of data to the second group of memory cells.

Abstract: The inhibit voltage is a voltage applied to wordlines adjacent to a program wordline having a memory cell to write during the program operation. The inhibit voltage for a program operation can be ramped up during the program pulse. Instead of applying a constant high inhibit voltage that results in the initial boosted channel potential reducing drastically due to leakage, a system can start the inhibit voltage lower and ramp the inhibit voltage up during the program pulse. The ramping up can be a continuous ramp or in finite discrete steps during the program pulse. Such ramping of inhibit voltage can provide better tradeoff between program disturb and inhibit disturb.

Abstract: Systems, apparatuses and methods may provide for identifying a target sub-block of NAND strings to be partially or wholly erased in memory and triggering a leakage current condition in one or more target select gate drain-side (SGD) devices associated with the target sub-block. Additionally, the leakage current condition may be inhibited in one or more remaining SGD devices associated with remaining sub-blocks of NAND strings in the memory. In one example, triggering the leakage current condition in the one or more target SGD devices includes setting a gate voltage of the one or more target SGD devices to a value that generates a reverse voltage that exceeds a threshold corresponding to the leakage current condition.

Abstract: In one embodiment, an apparatus comprises a memory comprising a first group of memory cells, a second group of memory cells, and a controller to program one or more lower pages of data to the first group of memory cells; store dynamic start voltage information, the dynamic start voltage information indicative of a rate of programming of at least a portion of the first group of memory cells; determine a start program voltage based on the dynamic start voltage information; and apply the start program voltage to the second group of memory cells during a first program pass of a program operation, the program operation to program one or more lower pages of data to the second group of memory cells.

Abstract: Apparatuses and methods for performing buffer operations in memory are provided. A method can include storing second page data and third page data on a buffer while programming first page data during a first pass programming operation and programming the second page data and the third page data from the buffer to the array of memory cells during a second pass programming operation.

Abstract: Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.