Patents by Inventor Shanthi Iyer

Shanthi Iyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250072128
    Abstract: The presently-disclosed subject matter relates generally to GaAs/GaAsSb core-shell nanowire grown on silicon substrate, methods of growing such nanowire, and the use of said nanowires in various applications, including but not limited to photodetection applications.
    Type: Application
    Filed: August 22, 2024
    Publication date: February 27, 2025
    Applicant: North Carolina A&T State University
    Inventors: Shanthi Iyer, Shisir Devkota, Mehul Parakh, Rabin Pokharel, Priyanka Ramaswamy, Kendall Dawkins, Jia Li
  • Patent number: 12221719
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1?y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1?x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1?mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAS(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Grant
    Filed: January 29, 2024
    Date of Patent: February 11, 2025
    Assignee: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma
  • Publication number: 20240218563
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1?y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1?x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1?mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAS(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Application
    Filed: January 29, 2024
    Publication date: July 4, 2024
    Applicant: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma
  • Patent number: 11905622
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: February 20, 2024
    Assignee: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma
  • Patent number: 11384286
    Abstract: The presently disclosed subject matter relates generally to GaAs1?xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: July 12, 2022
    Assignee: North Carolina A&T State University
    Inventors: Shanthi Iyer, Surya Ratna Kiran Nalamati, Jia Li
  • Publication number: 20210317598
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Application
    Filed: April 13, 2021
    Publication date: October 14, 2021
    Applicant: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma
  • Publication number: 20210095199
    Abstract: The presently disclosed subject matter relates generally to GaAs1?xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 1, 2021
    Applicant: North Carolina A&T State University
    Inventors: Shanthi Iyer, Surya Ratna Kiran Nalamati, Jia Li
  • Publication number: 20170130363
    Abstract: In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs(1-x-y)SbxNy. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 ?m. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs(0.82-0.9)Sb(0.09-0.15)N(0.005-0.033)/GaAs.
    Type: Application
    Filed: November 4, 2016
    Publication date: May 11, 2017
    Inventors: Shanthi Iyer, Pavan Kumar Kasanaboina, Jia Li
  • Patent number: 7577953
    Abstract: A configurable business process adapted to be created from a user interface includes defining flow tasks that identify value objects and obtaining the value objects used by the flow tasks. The value objects are evaluated using evaluation rules to produce a result. The result is used, in turn, to generate instructions to a system user relating to the value objects. The configurable business process operates through a business flow engine accessible to the system user through the user interface. A business flow configuration file and an adapter configuration file are defined. The adapter configuration file maps components, methods, arguments, and return values using an XML engine. Component APIs and an evaluation rules database are provided. The business flow configuration file defines selected component APIs to be executed to perform a user-defined operation.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: August 18, 2009
    Assignee: DST Innovis, Inc.
    Inventors: Greg Verego, Maxine Campbell, Paul Lockyer, Michael Axford, Tom Berrisford, Sandy Boyd, Shanthi Iyer, Kevin Edwards