Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.

Abstract: The presently disclosed subject matter relates generally to GaAs1?xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.

Abstract: The presently disclosed subject matter relates generally to GaAs1?xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

Abstract: In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs(1-x-y)SbxNy. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 ?m. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs(0.82-0.9)Sb(0.09-0.15)N(0.005-0.033)/GaAs.

Abstract: A configurable business process adapted to be created from a user interface includes defining flow tasks that identify value objects and obtaining the value objects used by the flow tasks. The value objects are evaluated using evaluation rules to produce a result. The result is used, in turn, to generate instructions to a system user relating to the value objects. The configurable business process operates through a business flow engine accessible to the system user through the user interface. A business flow configuration file and an adapter configuration file are defined. The adapter configuration file maps components, methods, arguments, and return values using an XML engine. Component APIs and an evaluation rules database are provided. The business flow configuration file defines selected component APIs to be executed to perform a user-defined operation.