Abstract: A quantum entanglement system comprising a laser system, a spontaneous parametric down conversion crystal system, and a thermal management system. The laser system is configured to generate a laser beam. The spontaneous parametric down conversion crystal system comprises a spontaneous parametric down conversion crystal configured to receive the laser beam at a spontaneous parametric down conversion crystal and generate an entangled photon pair in response to the spontaneous parametric down conversion crystal receiving the laser beam. The thermal management system is configured to maintain the spontaneous parametric down conversion crystal at an annealing temperature during a generation of the entangled photon pair. A translation system is configured to move a position of the spontaneous parametric down conversion crystal.

Abstract: A method for producing a planar semiconductor surface includes forming a workpiece that has a carrier substrate, one or more insulating layers, a semiconductor layer, a first etch stop layer, and a second etch stop layer; forming a contact on the workpiece; biasing the workpiece to a second voltage through the contact; etching the second etch stop layer and part of the first etch stop layer with a photo-electrochemical etching and the second voltage that selectively removes the second etch stop layer faster than the first etch stop layer; biasing the workpiece to a first voltage through the contact; and etching the first etch stop layer and part of the semiconductor layer with the photo-electrochemical etching and the first voltage that selectively removes the first etch stop layer faster than the semiconductor layer to produce a semiconductor device with a planar surface on the semiconductor layer.

Abstract: A method for etching a substrate using a light emitting diode (LED) lamp includes placing the substrate in an etching chamber equipped with the LED lamp configured to emit ultra-violet (UV) having a selected wavelength. The method includes submerging the substrate in an electrolyte solution within the etching chamber and applying a bias voltage between the substrate and the electrolyte solution. The method includes illuminating the substrate with the UV light to irradiate the substrate's surface. The method includes removing the substrate from the electrolyte solution once a desired etch depth is achieved.

Abstract: Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

Abstract: A method for producing a planar semiconductor surface includes forming a workpiece that has a carrier substrate, one or more insulating layers, a semiconductor layer, a first etch stop layer, and a second etch stop layer; forming a contact on the workpiece; biasing the workpiece to a second voltage through the contact; etching the second etch stop layer and part of the first etch stop layer with a photo-electrochemical etching and the second voltage that selectively removes the second etch stop layer faster than the first etch stop layer; biasing the workpiece to a first voltage through the contact; and etching the first etch stop layer and part of the semiconductor layer with the photo-electrochemical etching and the first voltage that selectively removes the first etch stop layer faster than the semiconductor layer to produce a semiconductor device with a planar surface on the semiconductor layer.

Abstract: Some variations provide a polyoxalamide polymer comprising: one or more first segments containing at least one repeat unit that includes (i) a branched, aliphatic hydrocarbon species and (ii) first amide groups at internal ends of the repeat unit, wherein the first amide groups are part of oxalamide groups; one or more polymer end groups containing second amide groups that are each covalently bonded directly to one of the first amide groups, wherein the second amide groups are also part of the oxalamide groups, and wherein the oxalamide groups contain —N—C(?O)—C(?O)—N— sequences; and a reacted form of one or more multifunctional amine chain extenders or crosslinkers with an amine functionality of 3 or greater. The polyoxalamide polymer may be present in a lens, a window, a coating, or a film, for example. The polyoxalamide polymer may have UV transparency, visual transparency, NIR transparency, MWIR transparency, and/or LWIR transparency.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: Some variations provide a polyoxalamide polymer comprising: one or more first segments containing at least one repeat unit that includes (i) a branched, aliphatic hydrocarbon species and (ii) first amide groups at internal ends of the repeat unit, wherein the first amide groups are part of oxalamide groups; one or more polymer end groups containing second amide groups that are each covalently bonded directly to one of the first amide groups, wherein the second amide groups are also part of the oxalamide groups, and wherein the oxalamide groups contain —N—C(?O)—C(—O)—N-sequences; and a reacted form of one or more multifunctional amine chain extenders or crosslinkers with an amine functionality of 3 or greater. The polyoxalamide polymer may be present in a lens, a window, a coating, or a film, for example. The polyoxalamide polymer may have UV transparency, visual transparency, NIR transparency, MWIR transparency, and/or LWIR transparency.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured is to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: A thermal protection system includes: an outer skin; a thermally insulating material under the outer skin; and a high temperature radio frequency (RF) aperture. The RF aperture includes a plurality of waveguides separated from each other and extending through the outer skin and the thermally insulating material.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured is to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: Some variations provide an interspersed assembly of nanoparticles, the assembly comprising a first phase containing first nanoparticles and a second phase containing second nanoparticles, wherein the second phase is interspersed with the first phase, and wherein the first nanoparticles are compositionally different than the second nanoparticles. The interspersed assembly may be a semi-ordered assembly comprising discrete first-phase particles surrounded by a continuous second phase. Other variations provide a core-shell assembly of nanoparticles, the assembly comprising a first phase containing first nanoparticles and a second phase containing compositionally distinct second nanoparticles, wherein the second phase forms a shell surrounding a core of the first phase. The disclosed assemblies may have a volume from 1 ?m3 to 1 mm3, a packing fraction from 20% to 100%, and an average relative surface roughness less than 5%, for example.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AIN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Abstract: The disclosed structure is configured such that it does not support electromagnetic waves having frequencies within a selected band gap; those electromagnetic waves are thus reflected. Some variations provide an omnidirectional infrared reflector comprising a three-dimensional photonic crystal containing: rods of a first material that has a first refractive index, wherein the rods are arranged to form a plurality of lattice periods in three dimensions, and wherein the rods are connected at a plurality of nodes; and a second material that has a refractive index that is lower than the first refractive index, wherein the rods are embedded in the second material. The lattice spacing and the rod radius or width are selected to produce a photonic band gap within a selected band of the infrared spectrum. Methods of making and using the three-dimensional photonic crystal are described. Applications include thermal barrier coatings and blackbody emission signature control.

Abstract: A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.

Abstract: A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.

Abstract: Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

Abstract: An antibacterial interior component, such as a door handle component, is provided in a vehicle that includes at least one touch surface in a confined space having a shadowed region. A light source includes a light emitting diode (LED) that generates light having a wavelength of ?about 375 nm to ?about 425 nm directed towards the at least one touch surface for killing bacteria. A thermally conductive component in heat transfer relationship with the light source to transfer heat to a heat sink either in or adjacent to the antibacterial interior component. Methods of operating the self-sanitizing antibacterial interior component are also provided.

Abstract: Some variations provide a magnetically anisotropic structure comprising a magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains from 2 wt % to 75 wt % organic matter. Some variations provide a magnetically anisotropic structure comprising an out-of-plane magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains a concentration of hexaferrite particles of at least 40 vol %.