Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured is to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: Some variations provide an interspersed assembly of nanoparticles, the assembly comprising a first phase containing first nanoparticles and a second phase containing second nanoparticles, wherein the second phase is interspersed with the first phase, and wherein the first nanoparticles are compositionally different than the second nanoparticles. The interspersed assembly may be a semi-ordered assembly comprising discrete first-phase particles surrounded by a continuous second phase. Other variations provide a core-shell assembly of nanoparticles, the assembly comprising a first phase containing first nanoparticles and a second phase containing compositionally distinct second nanoparticles, wherein the second phase forms a shell surrounding a core of the first phase. The disclosed assemblies may have a volume from 1 ?m3 to 1 mm3, a packing fraction from 20% to 100%, and an average relative surface roughness less than 5%, for example.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AIN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Abstract: The disclosed structure is configured such that it does not support electromagnetic waves having frequencies within a selected band gap; those electromagnetic waves are thus reflected. Some variations provide an omnidirectional infrared reflector comprising a three-dimensional photonic crystal containing: rods of a first material that has a first refractive index, wherein the rods are arranged to form a plurality of lattice periods in three dimensions, and wherein the rods are connected at a plurality of nodes; and a second material that has a refractive index that is lower than the first refractive index, wherein the rods are embedded in the second material. The lattice spacing and the rod radius or width are selected to produce a photonic band gap within a selected band of the infrared spectrum. Methods of making and using the three-dimensional photonic crystal are described. Applications include thermal barrier coatings and blackbody emission signature control.

Abstract: A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.

Abstract: A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.

Abstract: Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

Abstract: An antibacterial interior component, such as a door handle component, is provided in a vehicle that includes at least one touch surface in a confined space having a shadowed region. A light source includes a light emitting diode (LED) that generates light having a wavelength of ?about 375 nm to ?about 425 nm directed towards the at least one touch surface for killing bacteria. A thermally conductive component in heat transfer relationship with the light source to transfer heat to a heat sink either in or adjacent to the antibacterial interior component. Methods of operating the self-sanitizing antibacterial interior component are also provided.

Abstract: Some variations provide a magnetically anisotropic structure comprising a magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains from 2 wt % to 75 wt % organic matter. Some variations provide a magnetically anisotropic structure comprising an out-of-plane magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains a concentration of hexaferrite particles of at least 40 vol %.

Abstract: A method for fabricating polymeric sheets containing microwires includes encapsulating at least a portion of individual lengths of a plurality of microwires in a non-conductive polymeric sheet while the microwires are attached to the substrate. The microwires are then detached from the substrate without removing the microwires from the polymeric sheet. The detaching step forms a separated polymeric sheet containing the detached microwires. Individual detached microwires of the plurality are approximately perpendicular to the separated polymeric sheet. A microwire array device includes a non-conductive polymeric sheet and a plurality of microwires. Individual microwires of the plurality have an independent length at least partially encapsulated by the polymeric sheet, are approximately perpendicular to the polymeric sheet, and contain magnetic ferrite.

Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AIN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Abstract: Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AlN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Abstract: Some variations provide a reworkable ionomer composition comprising: a polymer containing a plurality of ionic monomers disposed in a chain backbone of the polymer, wherein the ionic monomers have a monomer charge polarity that is either positive or negative; and a plurality of ionic species disposed within the chain backbone of the polymer, wherein the ionic species have opposite charge polarity compared to the monomer charge polarity, wherein the ionic species and the ionic monomers are ionically bonded, and wherein the ionic species are capable of undergoing a reversible oxidation-state transition of at least +1 or ?1 when in the presence of a redox reagent. The polymer may be selected from the group consisting of polyurethanes, polyacrylates, polyamides, polyesters, polyureas, polyurethane-ureas, polysiloxanes, polycarbonates, and combinations thereof. Many options for ionic monomers and ionic species are disclosed.

Abstract: In some variations, the invention provides a method of depositing nanoparticles on a substrate, comprising: providing a substrate having a positive or negative surface charge; optionally depositing a polymer on the substrate, wherein the polymer has opposite charge polarity compared to the substrate; and simultaneously depositing first nanoparticles and second nanoparticles onto the substrate, wherein the first nanoparticles and the second nanoparticles have opposite charge polarities during depositing. Other variations provide a method of depositing a layer of nanoparticles on a substrate, the method comprising: providing a substrate having a positive or negative surface charge; providing faceted nanoparticles; preparing a nanoparticle solution containing the nanoparticles; and adjusting surface charge of the nanoparticles by changing the solution pH to reduce the magnitude of average zeta potential of the nanoparticles, thereby causing aggregation of the nanoparticles onto the substrate surface.

Abstract: Some variations provide a method of assembling a plurality of particles into particle assemblies, comprising: (a) obtaining a first fluid containing particles and a solvent for the particles; (b) obtaining a second fluid not fully miscible with the first fluid; (c) obtaining a third fluid that is a co-solvent for the first fluid and the second fluid; (d) combining the first fluid and the second fluid to generate an emulsion containing droplets of the first fluid in the second fluid; (e) adding the third fluid to the emulsion; and (f) dissolving out the solvent from the droplets into the third fluid, thereby forming particle assemblies. Some variations also provide an assembly of nanoparticles, wherein the assembly has a volume from 1 ?m3 to 1 mm3, a packing fraction from 20% to 100%, and/or an average relative surface roughness less than 1%, wherein the assembly is not disposed on a substrate.

Abstract: Some variations provide a device for assembling a plurality of particles into particle assemblies, comprising: (a) a microfluidic droplet-generating region; (b) a first inlet to the droplet-generating region, configured to feed a first fluid containing particles and a solvent for the particles; (c) a second inlet to the droplet-generating region, configured to feed a second fluid that is not fully miscible with the first fluid; (d) a droplet outlet from the droplet-generating region, configured to withdraw droplets of the first fluid dispersed in the second fluid; and (e) a droplet-dissolving region configured to remove solvent from the droplets, thereby forming particle assemblies. Some variations also provide an assembly of nanoparticles, wherein the assembly has a volume from 1 ?m3 to 1 mm3, a packing fraction from 20% to 100%, and/or an average relative surface roughness less than 1%, wherein the assembly is not disposed on a substrate.

Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AlN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Abstract: The disclosed structure is configured such that it does not support electromagnetic waves having frequencies within a selected band gap; those electromagnetic waves are thus reflected. Some variations provide an omnidirectional infrared reflector comprising a three-dimensional photonic crystal containing: rods of a first material that has a first refractive index, wherein the rods are arranged to form a plurality of lattice periods in three dimensions, and wherein the rods are connected at a plurality of nodes; and a second material that has a refractive index that is lower than the first refractive index, wherein the rods are embedded in the second material. The lattice spacing and the rod radius or width are selected to produce a photonic band gap within a selected band of the infrared spectrum. Methods of making and using the three-dimensional photonic crystal are described. Applications include thermal barrier coatings and blackbody emission signature control.