Abstract: A nanotube-photoresist composite is fabricated by preparing a nanotube suspension using a nanotube structure-containing raw material, dispersing the nanotube suspension in a photoresist using ultra-sonication to produce a nanotube suspension-photoresist mix, spin-coating the nanotube suspension-photoresist mix on a substrate to form a nanotube suspension-photoresist composite layer, and removing one or more solvents in the nanotube suspension-photoresist composite layer by baking.

Abstract: An interconnect structure for use in an integrated circuit is provided. The interconnect structure includes a first low-K dielectric material. The first low-K material may be modified with a first group of carbon nanotubes (CNTs) and disposed on a metal line. The first low-K material is modified by dispersing the first group of CNTs in a solution, spinning the solution onto a silicon wafer and curing the solution to form the first low-K material modified with the first CNTs. The metal line includes a top layer and a bottom layer connected by a metal via. The interconnect structure also includes a second low-K dielectric material modified with a second group of CNTs and disposed on the bottom layer. Accordingly, embodiments the present disclosure could help to increase the mechanical strength of the low-K material or the entire interconnect structure.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: An interconnect structure for use in an integrated circuit is provided. The interconnect structure includes a first low-K dielectric material. The first low-K material may be modified with a first group of carbon nanotubes (CNTs) and disposed on a metal line. The first low-K material is modified by dispersing the first group of CNTs in a solution, spinning the solution onto a silicon wafer and curing the solution to form the first low-K material modified with the first CNTs. The metal line includes a top layer and a bottom layer connected by a metal via. The interconnect structure also includes a second low-K dielectric material modified with a second group of CNTs and disposed on the bottom layer. Accordingly, embodiments the present disclosure could help to increase the mechanical strength of the low-K material or the entire interconnect structure.