Patents by Inventor Shao-Chi Wei

Shao-Chi Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240152057
    Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 9, 2024
    Inventors: Johannes Ruoff, Heiko Feldmann, Ulrich Matejka, Thomas Thaler, Sascha Perlitz, Shao-Chi Wei, Joerg Frederik Blumrich, Markus Deguenther
  • Patent number: 11914303
    Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: February 27, 2024
    Assignee: Carl Zeiss SMT GmbH
    Inventors: Johannes Ruoff, Heiko Feldmann, Ulrich Matejka, Thomas Thaler, Sascha Perlitz, Shao-Chi Wei, Joerg Frederik Blumrich, Markus Deguenther
  • Patent number: 11774870
    Abstract: A method for removing particles from a mask system for a projection exposure apparatus, including the following method steps: detecting the particle in the mask system, providing laser radiation, and removing the particle by irradiating the particle with laser radiation. The wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: October 3, 2023
    Assignees: Carl Zeiss SMT GmbH, Carl Zeiss SMS Ltd.
    Inventors: Sergey Oshemkov, Shao-Chi Wei, Joerg Frederik Blumrich, Martin Voelcker, Thomas Franz Karl Scheruebl
  • Patent number: 11600484
    Abstract: A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shao-Chi Wei, Hao-Ming Chang
  • Publication number: 20230053667
    Abstract: The invention relates to a method for removing particles from a mask system for a projection exposure apparatus, comprising the following method steps: detecting the particle in the mask system, providing laser radiation, removing the particle by irradiating the particle with laser radiation. According to the invention, the wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 23, 2023
    Inventors: Sergey Oshemkov, Shao-Chi Wei, Joerg Frederik Blumrich, Martin Voelcker, Thomas Franz Karl Scheruebl
  • Publication number: 20220359187
    Abstract: A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Inventors: SHAO-CHI WEI, HAO-MING CHANG
  • Patent number: 11307492
    Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Minfeng Chen, Min-An Yang, Shao-Chi Wei
  • Publication number: 20220113631
    Abstract: A method for cleaning is provided. The method includes: removing a pellicle frame from a top surface of a photomask by debonding an adhesive between the photomask and the pellicle frame, wherein a first portion of the adhesive is remained on the top surface of the photomask, and removing the first portion of the adhesive on the top surface of the photomask, including applying an alkaline solution to the top surface of the photomask, and performing a mechanical impact to the photomask.
    Type: Application
    Filed: December 23, 2021
    Publication date: April 14, 2022
    Inventors: YU-HSIN HSU, HAO-MING CHANG, SHAO-CHI WEI, SHENG-CHANG HSU, CHENG-MING LIN
  • Patent number: 11209736
    Abstract: A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Hsin Hsu, Hao-Ming Chang, Shao-Chi Wei, Sheng-Chang Hsu, Cheng-Ming Lin
  • Publication number: 20210397099
    Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.
    Type: Application
    Filed: June 11, 2021
    Publication date: December 23, 2021
    Inventors: Johannes Ruoff, Heiko Feldmann, Ulrich Matejka, Thomas Thaler, Sascha Perlitz, Shao-Chi Wei, Joerg Frederik Blumrich, Markus Deguenther
  • Publication number: 20210080822
    Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 18, 2021
    Inventors: Shih-Ming CHANG, Minfeng CHEN, Min-An YANG, Shao-Chi WEI
  • Publication number: 20210057209
    Abstract: A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Inventors: SHAO-CHI WEI, HAO-MING CHANG
  • Patent number: 10845699
    Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Ming Chang, Minfeng Chen, Min-An Yang, Shao-Chi Wei
  • Patent number: 10816891
    Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: October 27, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hao-Ming Chang, Chien-Hung Lai, Cheng-Ming Lin, Hsuan-Wen Wang, Min-An Yang, S. C. Hsu, Shao-Chi Wei, Yuan-Chih Chu
  • Publication number: 20200133118
    Abstract: A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.
    Type: Application
    Filed: February 14, 2019
    Publication date: April 30, 2020
    Inventors: YU-HSIN HSU, HAO-MING CHANG, SHAO-CHI WEI, SHENG-CHANG HSU, CHENG-MING LIN
  • Patent number: 10508953
    Abstract: A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Min-An Yang, Hao-Ming Chang, Shao-Chi Wei, Kuo-Chin Lin, Sheng-Chang Hsu, Li-Chih Lu, Cheng-Ming Lin
  • Patent number: 10459332
    Abstract: A method of fabricating a photomask includes providing a mask blank; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The mask blank includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: October 29, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hao-Ming Chang, Chih-Ming Chen, Cheng-Ming Lin, Sheng-Chang Hsu, Shao-Chi Wei, Hsao Shih, Li-Chih Lu
  • Publication number: 20190163051
    Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.
    Type: Application
    Filed: July 26, 2018
    Publication date: May 30, 2019
    Inventors: Shih-Ming CHANG, Minfeng CHEN, Min-An YANG, Shao-Chi WEI
  • Publication number: 20180299768
    Abstract: A photo mask assembly including a photo mask, a first adhesive layer adhered with the photo mask, a pellicle frame and a pellicle is provided. The pellicle frame includes a plurality of recesses for accommodating the first adhesive layer. The pellicle frame is adhered with the photo mask through the first adhesive layer accommodated in the plurality of recesses. The pellicle is disposed on the pellicle frame. The pellicle frame is between the pellicle and the first adhesive layer. An optical apparatus including the above-mentioned photo mask assembly is also provided.
    Type: Application
    Filed: April 13, 2017
    Publication date: October 18, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Chi Wei, Cheng-Ming Lin, Sheng-Chang Hsu, Yu-Hsin Hsu, Hao-Ming Chang
  • Patent number: 10101651
    Abstract: A photo mask assembly including a photo mask, a first adhesive layer adhered with the photo mask, a pellicle frame and a pellicle is provided. The pellicle frame includes a plurality of recesses for accommodating the first adhesive layer. The pellicle frame is adhered with the photo mask through the first adhesive layer accommodated in the plurality of recesses. The pellicle is disposed on the pellicle frame. The pellicle frame is between the pellicle and the first adhesive layer. An optical apparatus including the above-mentioned photo mask assembly is also provided.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: October 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: SHao-Chi Wei, Cheng-Ming Lin, Sheng-Chang Hsu, Yu-Hsin Hsu, Hao-Ming Chang