Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.

Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.

Abstract: A sleep aid system and an operation method thereof are disclosed. The sleep aid system includes a sleep aid device including a retrieving module, a processing module, and a transmitting module, and a server. The retrieving module retrieves a brainwave signal including specific frequency band signals. The processing module analyzes the brainwave signal to obtain an index in each of the specific frequency band signals and calculates a sleepless degree parameter representing one of at least five brainwave states regarding sleep accordingly. The transmitting module transmits a parameter signal corresponding to the sleepless degree parameter. The server receives the parameter signal from the transmitting module. The server stores comparison data, compares the parameter signal to the comparison data, and generates a first feedback signal according to a comparison result. The first feedback signal includes a command to switch an audio file or stream which is currently being played.

Abstract: A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.

Abstract: A sleep aid system and an operation method thereof are disclosed. The sleep aid system includes a sleep aid device including a retrieving module, a processing module, and a transmitting module, and a server. The retrieving module retrieves a brainwave signal including specific frequency band signals. The processing module analyzes the brainwave signal to obtain an index in each of the specific frequency band signals and calculates a sleepless degree parameter representing one of at least five brainwave states regarding sleep accordingly. The transmitting module transmits a parameter signal corresponding to the sleepless degree parameter. The server receives the parameter signal from the transmitting module. The server stores comparison data, compares the parameter signal to the comparison data, and generates a first feedback signal according to a comparison result. The first feedback signal includes a command to switch an audio file or stream which is currently being played.

Abstract: A fatigue monitoring apparatus includes a fatigue detecting helmet. The fatigue detecting helmet includes a cap, a first electrode, a second electrode, a fatigue computation device and a power supply. The first electrode is disposed in the cap to contact a head, thereby obtaining a first physiological information. The second electrode is positioned out of the cap to contact the head, thereby obtaining a second physiological information. The fatigue computation device and the power supply are disposed on the cap. The fatigue computation device includes a brainwave computation module and a fatigue judgment module. The brainwave computation module is electrically connected to the first and second electrodes for obtaining a brainwave information based on the first and second physiological information. The fatigue judgment module is electrically connected to the brainwave computation module for obtaining a fatigue information based on the brainwave information.