Patents by Inventor Shao-Chuang Huang

Shao-Chuang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistor structure for ESD protection circuits
    Patent number: 7465995
    Abstract: A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.
    Type: Grant
    Filed: January 10, 2006
    Date of Patent: December 16, 2008
    Assignee: Taiwan Semiconductor Manufacturing Co.
    Inventors: Yu-Hung Chu, Shao-Chuang Huang
  • Resistor structure for ESD protection circuits
    Publication number: 20070158748
    Abstract: A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.
    Type: Application
    Filed: January 10, 2006
    Publication date: July 12, 2007
    Inventors: Yu-Hung Chu, Shao-Chuang Huang