Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: Monoclonal antibodies of molecular markers (KRT7, KLK10 and LAMC2) for specifically marking very-early-stage cells of gastric cancer are prepared, and are used in the preparation of a kit for determining the very-early-stage onset risk of gastric cancer or other digestive tract tumors on the basis of gastric tissue or blood. The results show that: 1) the overall accuracy rate of predicting the progression risk of low-grade dysplasia reaches 86%, and the AUC value reaches 0.87; 2) the accuracy rate is closely related to the progression time of low-grade dysplasia, wherein the accuracy rate is increased to 95% 6 months before the onset of gastric cancer, and the window for the early diagnosis of gastric cancer can be moved forward by an average of 10 months; and 3) the accuracy rate of the marker in diagnosing gastric cancer is over 97%.

Abstract: The present disclosure provide latch performance detecting method and a device. The method includes: extracting circuit structure information of a latch, having a transmission gate and a latch unit, an output terminal of the transmission gate is coupled to the input terminal of the latch unit, and the input terminal is coupled to the output terminal of the drive unit corresponding to the latch; the resistance value of the equivalent resistor of the latch is determined based on the circuit structure information, The first terminal of the equivalent resistor is the output terminal of the driving unit, and the second terminal is the input terminal of the latching unit; based on the resistance value of the equivalent resistor, the latching performance is determined. The embodiments of the present disclosure can accurately detect whether the latch is in a metastable state, which helps to improve the performance of the circuit.

Abstract: The present disclosure provide latch performance detecting method and a device. The method includes: extracting circuit structure information of a latch, having a transmission gate and a latch unit, an output terminal of the transmission gate is coupled to the input terminal of the latch unit, and the input terminal is coupled to the output terminal of the drive unit corresponding to the latch; the resistance value of the equivalent resistor of the latch is determined based on the circuit structure information, The first terminal of the equivalent resistor is the output terminal of the driving unit, and the second terminal is the input terminal of the latching unit; based on the resistance value of the equivalent resistor, the latching performance is determined. The embodiments of the present disclosure can accurately detect whether the latch is in a metastable state, which helps to improve the performance of the circuit.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A display panel and a display apparatus. The display panel includes: a light-emitting device layer including a base plate and a light-emitting layer arranged in stack; a touch control layer including touch control electrodes and a planarization layer covering the touch control electrodes; a buffer layer arranged at a side of the planarization layer away from the light-emitting device layer; an optical film layer arranged at a side of the buffer layer away from the touch control layer and including a plurality of black matrices and a plurality of light filtering units arranged in the same layer as the black matrices; a material of the buffer layer and a material of the planarization layer are immiscible, and an orthographic projection of the buffer layer on the base plate covers an orthographic projection of the light filtering units on the base plate.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A resin composition and a cured film are provided. The resin composition includes a resin (A), a crosslinking agent (B), a surfactant (C), an additive (D) and a solvent (E). The resin (A) includes at least one of a phenol-based resin (A-1) and a polystyrene resin including a hydroxyl group (A-2). The additive (D) includes a fluoro-based phenol (D-1), a polyhydroxyphenol resin (D-2), a compound including an epoxy group (D-3), a polyether resin (D-4), a thermal acid generator including a sulfonate ion (D-5), or a combination thereof.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A resin composition, an anti-etching layer and an etching method are provided. The resin composition includes a resin (A), a crosslinking agent (B), a surfactant (C), and a solvent (D). The resin (A) includes a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxy phenol resin (A-3), or a combination thereof. The crosslinking agent (B) includes a structure of novolac epoxy resin type (B-1), polymethyl methacrylate type (B-2), maleimide type (B-3) or hyperbranched oligomer (B-4).

Abstract: A method of forming a nanostructure field-effect transistor (nano-FET) device includes: forming a fin structure that includes a fin and alternating layers of a first semiconductor material and a second semiconductor material overlying the fin; forming a dummy gate structure over the fin structure; forming source/drain regions over the fin structure on opposing sides of the dummy gate structure; removing the dummy gate structure to expose the first and second semiconductor materials under the dummy gate structure; selectively removing the exposed first semiconductor material, where after the selectively removing, the exposed second semiconductor material remains to form nanostructures, where different surfaces of the nanostructures have different atomic densities of the second semiconductor material; forming a gate dielectric layer around the nanostructures, thicknesses of the gate dielectric layer on the different surfaces of the nanostructures being formed substantially the same; and forming a gate electrode

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A cabinet with filter life prediction function and a method of predicting filter life are provided. The cabinet has an airflow module generating airflow flowing through a filter module. An air quality sensor continuously monitors the air quality sensing value of the airflow and records the sensed value in association with the sensing time. A regression analysis is performed based on the record data to obtain a regression model when a modeling condition is met. When a prediction condition is met, a time period for the currently sensed value to decrease to a threshold is calculated to be a predicted remaining life of the filter module. A notification is generated when the predicted remaining life of the filter module is less than a life threshold.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: The present invention provides a use of a substance in the preparation of a product for treating chronic atrophic gastritis, protecting gastric mucosa, treating gastric precancerous lesions, blocking transformation of gastritis into cancer, and preventing occurrence of gastric cancer, the product being one selected from a medicament, a healthcare product and a foodstuff, and the substance being selected from the group consisting of: nuciferin, a nuciferin derivative, a lotus leaf extract, and a mixture of at least two selected from the above substances. The use includes at least one of treating chronic atrophic gastritis, protecting gastric mucosa, blocking transformation of gastritis into cancer, treating gastric precancerous lesions, and preventing occurrence of gastric cancer. In vitro experiments showed that nuciferin can block transformation of gastritis into cancer and cell proliferation.

Abstract: A scorpion venom heat-resistant synthetic peptide (SVHRSP) contains an amino acid sequence of SEQ ID NO 1. One or more amino acids the amino acid sequence can be substituted or deleted. A pharmaceutical composition that contains the SVHRSP has numerous applications. The pharmaceutical composition can be used to protect neuronal cell against amyloid beta-induced toxic effects, or to inhibit the sodium channel current of a hippocampal neuronal cell, or to protect a neuronal cell against NMDA-induced injury. It may also promote the formation of a pluripotent neural stem cell from a type II astrocyte, or treats a subject, such as a human, having epilepsy, Alzheimer's disease, or Parkinson's disease.

Abstract: A scorpion venom heat-resistant synthetic peptide (SVHRSP) contains an amino acid sequence of SEQ ID NO 1. One or more amino acids the amino acid sequence can be substituted or deleted. A pharmaceutical composition that contains the SVHRSP has numerous applications. The pharmaceutical composition can be used to protect neuronal cell against amyloid beta-induced toxic effects, or to inhibit the sodium channel current of a hippocampal neuronal cell, or to protect a neuronal cell against NMDA-induced injury. It may also promote the formation of a pluripotent neural stem cell from a type II astrocyte, or treats a subject, such as a human, having epilepsy, Alzheimer's disease, or Parkinson's disease.

Abstract: A scorpion venom heat-resistant synthetic peptide (SVHRSP) contains an amino acid sequence of SEQ ID NO 1. One or more amino acids the amino acid sequence can be substituted or deleted. A pharmaceutical composition that contains the SVHRSP has numerous applications. The pharmaceutical composition can be used to protect neuronal cell against amyloid beta-induced toxic effects, or to inhibit the sodium channel current of a hippocampal neuronal cell, or to protect a neuronal cell against NMDA-induced injury. It may also promotes the formation of a pluripotent neural stem cell from a type II astrocyte, or treats a subject, such as a human, having epilepsy, Alzheimer's disease, or Parkinson's disease.