Patents by Inventor Shao-Ning Mei

Shao-Ning Mei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4944961
    Abstract: A high ionization efficiency process for partially ionized beam deposition of metals or metal alloys on substrates such as semiconductor wafers is described. Metal vaporized from a crucible is partially ionized at the crucible exit, and the ionized vapor is drawn to the substrate by an imposed bias. Control of substrate temperature allows non-conformal coverage of stepped surfaces such as vias or trenches. When higher substrate temperatures are used, stepped surfaces are planarized.
    Type: Grant
    Filed: August 5, 1988
    Date of Patent: July 31, 1990
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Toh-Ming Lu, Shao-Ning Mei