Patents by Inventor Shao-Nung Huang

Shao-Nung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11586420
    Abstract: The disclosure provides a blockchain random number generating system and blockchain random number generating method. The blockchain random number generating system includes a smart contract. A second electronic device generates a second random number and a second hash value corresponding to the second random number, and transmits the second hash value to a first block of the smart contract. A first electronic device generates a first random number and a first hash value corresponding to the first random number, and transmits the first hash value to a second block of the smart contract. A fifth block of the smart contract receives a real-time transaction index, and generates a random seed according to the real-time transaction index, the first random number and the second random number and calculates a result of the smart contract in the fifth block according to the random seed.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: February 21, 2023
    Assignee: Acer Incorporated
    Inventor: Shao-Nung Huang
  • Patent number: 11361110
    Abstract: A file verification method, a file verification system and a file verification server are provided. The file verification method includes the following steps. A tree data structure is established according to a plurality of first hash values of a plurality of first electronic files. A first root hash value of the tree data structure is stored into a block of a blockchain. A verification data including block information of the block, one of the first hash values and at least one non-terminal hash value of the tree data structure is generated for one of the first electronic files. A second electronic file is verified according to the verification data.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: June 14, 2022
    Assignee: Acer Incorporated
    Inventors: Yung-Cheng Huang, Shao-Nung Huang
  • Publication number: 20210286595
    Abstract: The disclosure provides a blockchain random number generating system and blockchain random number generating method. The blockchain random number generating system includes a smart contract. A second electronic device generates a second random number and a second hash value corresponding to the second random number, and transmits the second hash value to a first block of the smart contract. A first electronic device generates a first random number and a first hash value corresponding to the first random number, and transmits the first hash value to a second block of the smart contract. A fifth block of the smart contract receives a real-time transaction index, and generates a random seed according to the real-time transaction index, the first random number and the second random number and calculates a result of the smart contract in the fifth block according to the random seed.
    Type: Application
    Filed: April 22, 2020
    Publication date: September 16, 2021
    Applicant: Acer Incorporated
    Inventor: Shao-Nung Huang
  • Publication number: 20200364373
    Abstract: A file verification method, a file verification system and a file verification server are provided. The file verification method includes the following steps. A tree data structure is established according to a plurality of first hash values of a plurality of first electronic files. A first root hash value of the tree data structure is stored into a block of a blockchain. A verification data including block information of the block, one of the first hash values and at least one non-terminal hash value of the tree data structure is generated for one of the first electronic files. A second electronic file is verified according to the verification data.
    Type: Application
    Filed: August 19, 2019
    Publication date: November 19, 2020
    Applicant: Acer Incorporated
    Inventors: Yung-Cheng Huang, Shao-Nung Huang
  • Patent number: 9129852
    Abstract: A method for fabricating a non-volatile memory semiconductor device is disclosed. The method includes the steps of providing a substrate; forming a gate pattern on the substrate, wherein the gate pattern comprises a first polysilicon layer on the substrate, an oxide-nitride-oxide (ONO) stack on the first polysilicon layer, and a second polysilicon layer on the ONO stack; forming an oxide layer on the top surface and sidewall of the gate pattern; performing a first etching process to remove part of the oxide layer; and performing a second etching process to completely remove the remaining oxide layer.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: September 8, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hsiang-Chen Lee, Shao-Nung Huang, Wei-Pin Huang, Kuo-Lung Li, Ling-Hsiu Chou, Ping-Chia Shih
  • Patent number: 9040423
    Abstract: A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: May 26, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wan-Fang Chung, Ping-Chia Shih, Hsiang-Chen Lee, Che-Hao Chang, Jhih-Long Lin, Wei-Pin Huang, Shao-Nung Huang, Yu-Cheng Wang, Jaw-Jiun Tu, Chung-Che Huang
  • Publication number: 20150024598
    Abstract: A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.
    Type: Application
    Filed: July 17, 2013
    Publication date: January 22, 2015
    Inventors: Wan-Fang Chung, Ping-Chia Shih, Hsiang-Chen Lee, Che-Hao Chang, Jhih-Long Lin, Wei-Pin Huang, Shao-Nung Huang, Yu-Cheng Wang, Jaw-Jiun Tu, Chung-Che Huang