Abstract: A method of forming source/drain regions of semiconductor devices is disclosed. The method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, removing a portion of the fin structure adjacent to the polysilicon structure to form an opening, and forming a S/D region in the opening. The forming the S/D region includes exposing the fin structure in the opening to a first flow rate of a precursor gas during a first phase of a gas flow cycle, a second flow rate of the precursor gas during a second phase of the gas flow cycle. The exposing the fin structure in the opening to the precursor gas, the etching gas, and the plasma is performed in an in-situ process.

Abstract: A semiconductor device that has two transistors and a source/drain contact. The first transistor has a layer of semiconductor material that acts as a channel, a structure that serves as a gate and wraps around the semiconductor channel layer, and two epitaxy structures on either end of the semiconductor channel layer that function as the source and drain. The second transistor is situated above the first transistor and has similar components, including a semiconductor channel layer, gate structure, and source/drain epitaxy structures. The connection between the first and second source/drain epitaxy structures is made by a source/drain contact that passes through one of the second source/drain epitaxy structures. This contact is made up of a metal plug and a metal liner that lines the plug.

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming nanostructured channel regions, forming gate openings surrounding the nanostructured channel regions, forming oxide layers on exposed surfaces of the nanostructured channel regions in the gate openings, depositing a diffusion barrier layer on the oxide layers, depositing a first dielectric layer on the diffusion barrier layer, performing a doping process on the diffusion barrier layer and the first dielectric layer to form a doped diffusion barrier layer and a doped dielectric layer, and depositing a conductive layer on the doped dielectric layer.

Abstract: A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminate at an upper surface of a corresponding one of the raised portions; and forming a filler element in the gap in a bottom-up manner that avoids the filler element being formed laterally.

Abstract: A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.