Patents by Inventor Shao Wei

Shao Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996262
    Abstract: Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer, a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: May 28, 2024
    Assignee: ASML Netherlands B.V.
    Inventors: Marcus Adrianus Van De Kerkhof, Jing Zhang, Martijn Petrus Christianus Van Heumen, Patriek Adrianus Alphonsus Maria Bruurs, Erheng Wang, Vineet Sharma, Makfir Sefa, Shao-Wei Fu, Simone Maria Scolari, Johannes Andreas Henricus Maria Jacobs
  • Patent number: 11967855
    Abstract: An energy storage system has a battery device, a first terminal, a second terminal, a capacitor device and a DC/DC converter. The first and second terminals are respectively connected two electrodes of the battery device, and the two electrodes have opposite polarities. The capacitor device is electrically connected to the first and second terminals in parallel. The DC/DC converter is electrically connected between the first terminal and the capacitor device. The battery device composed of at least one secondary battery and the capacitor device composed of at least one capacitor are electrically connected to each other in parallel, and by combining with the DC/DC converter, configuring the relation between the equivalent series resistor of the capacitor device and the internal resistor of the battery device, and/or configuring the upper current limit of the rated current of range the DC/DC converter, the battery cycle life is increased.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: April 23, 2024
    Assignee: WAYS TECHNICAL CORP., LTD
    Inventors: Wen-Hsien Ho, Shao-Wei Chieh
  • Patent number: 11908371
    Abstract: In an automatic gamma adjustment system with environmental adaptability, the system is installed in a display device and an image signal source is selected, such that an image signal is received and converted into first YUV signals, while detecting the surrounding situation to obtain at least one environmental data, and obtaining a gamma control parameter of a display screen of the display device according to the environmental data. When the environmental data is calculated to obtain a maximum brightness current value, the gamma control parameter is used to calculate the first YUV signals as second YUV signals, and the maximum brightness current value and the second YUV signals are sent to the display device for displaying the image. Therefore the grayscale layering effect of an image presented to people can be adjusted by automatically correcting the gamma value according to the surrounding situation at any time.
    Type: Grant
    Filed: May 23, 2023
    Date of Patent: February 20, 2024
    Assignee: STARLIGHT DISPLAY CORPORATION
    Inventors: Shao-Wei Chiu, Yi-Yu Tsai, Yin-Cheng Huang
  • Patent number: 11901762
    Abstract: An energy storage system has a battery device, a first terminal, a second terminal, a capacitor device and a DC/DC converter. The first and second terminals are respectively connected two electrodes of the battery device, and the two electrodes have opposite polarities. The capacitor device is electrically connected to the first and second terminals in parallel. The DC/DC converter is electrically connected between the first terminal and the capacitor device. The battery device composed of at least one secondary battery and the capacitor device composed of at least one capacitor are electrically connected to each other in parallel, and by combining with the DC/DC converter, configuring the relation between the equivalent series resistor of the capacitor device and the internal resistor of the battery device, and/or configuring the upper current limit of the rated current of range the DC/DC converter, the battery cycle life is increased.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: February 13, 2024
    Assignee: WAYS TECHNICAL CORP., LTD.
    Inventors: Wen-Hsien Ho, Shao-Wei Chieh
  • Publication number: 20240045072
    Abstract: A laser detection system includes a light source module, an optical isolator, a scanner, and a detector. The light source module is configured for emitting a first laser having a first polarization direction. The optical isolator is on an optical path of the first laser configured to emit a second laser by transmitting the first laser from the light source module and prevent the second laser from transmitting toward the light source module. The scanner is on an optical path of the second laser and configured for reflecting the second laser to project a reference light to the target to be tested. The detector is configured to receive detection light reflected by the target to be tested and obtain position information of the target to be tested according to the detection light.
    Type: Application
    Filed: August 2, 2023
    Publication date: February 8, 2024
    Inventors: KUO-FONG TSENG, SHAO-WEI YANG
  • Patent number: 11890612
    Abstract: A multi-channel pipetting assembly includes a linkage member and a plurality of pipetting structures arranged in parallel. Each pipetting structure includes a pipette body, a piston rod, a piston tube, and an elastic element. The pipette body has a plurality of air chambers with different inner diameters, and the air chambers are arranged axially and communicate with each other. The piston rod is fixed to the linkage member. The piston tube is sleeved on the piston rod. The piston rod and the piston tube are located in the pipette body, and are axially and reciprocatingly movable in the pipette body. The piston rod matches the air chamber with the smallest inner diameter, and the piston tube matches the remaining air chambers. The elastic element is telescopically sleeved on the piston rod and corresponds to the piston tube. Therefore, a plurality of volume ranges meeting the accuracy requirements can be provided.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: February 6, 2024
    Assignee: WISTRON CORPORATION
    Inventors: Chi-Neng Weng, Chih-Kuan Lin, Shao-Wei Peng, Chih-Ying Chu
  • Patent number: 11876122
    Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.
    Type: Grant
    Filed: November 27, 2022
    Date of Patent: January 16, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Wei Chang, Chia-Ming Kuo, Po-Jen Chuang, Fu-Jung Chuang, Shao-Wei Wang, Yu-Ren Wang, Chia-Yuan Chang
  • Publication number: 20240006564
    Abstract: A device configured to bond an electronic component includes a carrying platform, a pressing element, a closed space generating mechanism, a gas extracting mechanism, and an energy generating mechanism. The carrying platform is configured to carry a target substrate and a carrying substrate carrying the electronic component on the target substrate. The pressing element is made of a flexible material. The closed space generating mechanism is capable of putting the pressing element onto the carrying platform, so as to form a closed space between the pressing element and the carrying platform. The gas extracting mechanism is configured to extract gas from the closed space. The energy generating mechanism is disposed near the carrying platform, and configured to generate energy toward the carrying platform. A method for bonding an electronic component and a method for manufacturing a light-emitting diode (LED) display are also provided.
    Type: Application
    Filed: June 26, 2023
    Publication date: January 4, 2024
    Applicant: Stroke Precision Advanced Engineering Co., Ltd.
    Inventors: Chingju Lin, Sheng-Che Huang, Shao-Wei Huang
  • Patent number: 11862727
    Abstract: The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of the fin structure. Forming a stress buffer layer on the substrate and conformally covering over the fin structure. Performing a nitridation treatment on the stress buffer layer to have a nitride portion. Perform a flowable deposition process to form a flowable dielectric layer to cover over the fin structures. Annealing the flowable dielectric layer. Polishing the flowable dielectric layer, wherein the nitride portion of the stress buffer layer is used as a polishing stop.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: January 2, 2024
    Assignee: United Microelectronics Corp.
    Inventors: Hao Che Feng, Hung Jen Huang, Hsin Min Han, Shih-Wei Su, Ming Shu Chiu, Pi-Hung Chuang, Wei-Hao Huang, Shao-Wei Wang, Ping Wei Huang
  • Publication number: 20230410712
    Abstract: In an automatic gamma adjustment system with environmental adaptability, the system is installed in a display device and an image signal source is selected, such that an image signal is received and converted into first YUV signals, while detecting the surrounding situation to obtain at least one environmental data, and obtaining a gamma control parameter of a display screen of the display device according to the environmental data. When the environmental data is calculated to obtain a maximum brightness current value, the gamma control parameter is used to calculate the first YUV signals as second YUV signals, and the maximum brightness current value and the second YUV signals are sent to the display device for displaying the image. Therefore the grayscale layering effect of an image presented to people can be adjusted by automatically correcting the gamma value according to the surrounding situation at any time.
    Type: Application
    Filed: May 23, 2023
    Publication date: December 21, 2023
    Inventors: SHAO-WEI CHIU, YI-YU TSAI, YIN-CHENG HUANG
  • Publication number: 20230369460
    Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.
    Type: Application
    Filed: June 9, 2022
    Publication date: November 16, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Kuang-Hsiu Chen, Wei-Chung Sun, Chao Nan Chen, Chun-Wei Yu, Kuan Hsuan Ku, Shao-Wei Wang
  • Publication number: 20230348708
    Abstract: The present disclosure provides a toughened resin composition, which includes: (A) a toughened and modified compound, which includes a polybenzoxazine compound, an anhydride grafted olefin polymer, and a diisocyanate compound; and (B) a thermosetting polymer; wherein, in the toughened and modified compound, the diisocyanate compound forms a bond with the polybenzoxazine compound and the anhydride grafted olefin polymer, respectively. The present disclosure has high toughness and excellent mechanical properties; thus, it may have a wide range of applications in the fields of electronics, aerospace, and the like.
    Type: Application
    Filed: December 6, 2022
    Publication date: November 2, 2023
    Inventors: Sheng-Yen WU, Tzu-Fang CHEN, Po-Kai TSENG, Yu-Chieh HSU, Te-Chieh LI, Shao-Wei YU
  • Patent number: 11659602
    Abstract: A wireless network connection management method includes at least one universal integrated circuit card (UICC) starting a search timer when utilizing a non-priority subscriber identity module (SIM) to establish a connection with a non-priority wireless network; the at least one UICC sending a search command to a wireless communication device in response to a first condition, wherein the first condition is that the search timer expires; a wireless communication device searching for and obtaining a current network status, and sending a reply message indicating the current network status to the at least one UICC; and in response to that the current network status indicates that a signal strength of a priority wireless network is greater than a specific signal strength, the at least one UICC informing and switching to the priority wireless network, and transmitting an update command to the wireless communication device.
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: May 23, 2023
    Assignee: Wistron Corporation
    Inventors: Shao-Wei Li, Shih-Ting Wang, Yu-Wei Fan
  • Publication number: 20230155330
    Abstract: The attachment housing for connecting at least one high-performance plug connector comprises at least two housing elements. At least one housing element is mounted on a support structure and designed to accommodate at least one electrically conductive cable. The housing element and the support structure each have at least one corresponding opening, which openings allow at least the feed-through of an electrically conductive cable. The attachment housing also comprises at least one counter-pressure frame which is located on the side of the support structure opposite the attachment housing and is connected to the attachment housing.
    Type: Application
    Filed: May 3, 2021
    Publication date: May 18, 2023
    Applicant: HARTING Electric Stiftung & Co. KG
    Inventors: Denny HELLIGE, Frank BÖHMANN, Walter GERSTL, Shao Wei WEN
  • Patent number: 11650576
    Abstract: A server for knowledge recommendation for defect review. The server includes a processor electronically coupled to an electronic storage device storing a plurality of knowledge files related to wafer defects. The processor is configured to execute a set of instruction to cause the server to: receive a request for knowledge recommendation for inspecting an inspection image from a defect classification server; search for a knowledge file in the electronic storage device that matches the inspection image; and transmit the search result to the defect classification server.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: May 16, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Wei Fang, Cho Huak Teh, Robeter Jian, Yi-Ying Wang, Shih-Tsung Chen, Jian-Min Liao, Chuan Li, Zhaohui Guo, Pang-Hsuan Huang, Shao-Wei Lai, Shih-Tsung Hsu
  • Publication number: 20230135072
    Abstract: The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of the fin structure. Forming a stress buffer layer on the substrate and conformally covering over the fin structure. Performing a nitridation treatment on the stress buffer layer to have a nitride portion. Perform a flowable deposition process to form a flowable dielectric layer to cover over the fin structures. Annealing the flowable dielectric layer. Polishing the flowable dielectric layer, wherein the nitride portion of the stress buffer layer is used as a polishing stop.
    Type: Application
    Filed: December 29, 2022
    Publication date: May 4, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Hao Che Feng, Hung Jen Huang, Hsin Min Han, Shih-Wei Su, Ming Shu Chiu, Pi-Hung Chuang, Wei-Hao Huang, Shao-Wei Wang, Ping Wei Huang
  • Publication number: 20230091153
    Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.
    Type: Application
    Filed: November 27, 2022
    Publication date: March 23, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Wei Chang, Chia-Ming Kuo, Po-Jen Chuang, Fu-Jung Chuang, Shao-Wei Wang, Yu-Ren Wang, Chia-Yuan Chang
  • Publication number: 20230085483
    Abstract: A backlight module includes a substrate, a light blocking unit, and a plurality of light-emitting chips. The light blocking unit is disposed on the substrate, and includes a carbon black, a scattering particle and a resin. The scattering particle is one of titanium dioxide, silicon dioxide, barium sulfate, and combinations thereof. The light blocking unit cooperates with the substrate to form a plurality of spaced-apart wells. The light-emitting chips are disposed in the wells, respectively, to permit optical units to be disposed thereon. A display device including the backlight module, and a method for making the display device are also provided herein.
    Type: Application
    Filed: January 28, 2022
    Publication date: March 16, 2023
    Inventor: Shao-Wei HUNG
  • Publication number: 20230052856
    Abstract: An electric vehicle with magnetic induction power generating device includes an vehicle body, at least one battery pack installed inside the vehicle body, at least one power generation device electrically coupled to the at least one battery pack for providing electricity, a transmission device placed between the battery pack and the power generating device, and at least one motor for driving the electric vehicle, wherein the at least one power generating device can be coupled to at least one free-running wheel of the vehicle for converting a rotating energy of the at least one free-running wheel into electricity.
    Type: Application
    Filed: August 11, 2021
    Publication date: February 16, 2023
    Inventor: Richard Shao Wei Chin
  • Patent number: 11581438
    Abstract: The invention provides a fin structure for a fin field effect transistor, including a substrate. The substrate includes a plurality of silicon fins, wherein a top of each one of the silicon fins is a round-like shape in a cross-section view. An isolation layer is disposed on the substrate between the silicon fins at a lower portion of the silicon fins while an upper portion of the silicon fins is exposed. A stress buffer layer is disposed on a sidewall of the silicon fins between the isolation layer and the lower portion of the silicon fins. The stress buffer layer includes a nitride portion.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: February 14, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hao Che Feng, Hung Jen Huang, Hsin Min Han, Shih-Wei Su, Ming Shu Chiu, Pi-Hung Chuang, Wei-Hao Huang, Shao-Wei Wang, Ping Wei Huang